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VBsemi VBA3638
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VBsemi VBA3638
- Type
- VBSEMI
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VBSEMI
- Electronic Component
- VBA3638
- Electronic Component
- 1
- Package
- SO-8
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.31g
- Electronic Component
- 1
- Electronic Component
- BM0228045089
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 4W
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
VBA3638 产品概述
一、产品简介
VBA3638 是 VBsemi(微碧半导体) 推出的双通道 N 沟道场效应管，封装为 SO-8。器件耐压 60V，单器件连续漏极电流 7A，适合中等功率开关与驱动场合。工作温度范围宽，额定为 -55℃ ～ +175℃，可靠性高，适用于汽车与工业级环境。
二、主要特性
- 双路 N 沟道（2 个 N 沟道）设计，便于两路开关或半桥应用布局。
- 低导通电阻：28mΩ @ VGS=10V，30mΩ @ VGS=4.5V，开关损耗与导通损耗兼顾。
- 门极电荷 Qg=11.7nC @ 10V，门极驱动需求适中，便于采用常见驱动器直接驱动。
- 输出电容 Coss=110pF，输入电容 Ciss=600pF，反向传输电容 Crss=50pF，开关特性适配高速切换场景。
- 门阈电压 Vgs(th)=2V @ 250μA，便于在低压逻辑环境下评估导通边界。
三、电气参数摘要
- 漏源电压 Vdss：60V
- 连续漏极电流 Id：7A
- 导通电阻 RDS(on)：28mΩ @ 10V；30mΩ @ 4.5V
- 耗散功率 Pd：4W
- 电容：Ciss=600pF，Coss=110pF，Crss=50pF
- 门极电荷 Qg：11.7nC @ 10V
- 门阈电压 Vgs(th)：2V @ 250μA
四、热与机械特性
- 工作温度：-55℃ ～ +175℃，适用于高温工作环境。
- 封装：SO-8，适合自动贴片生产。为保证热性能，应在 PCB 设计时采用宽铜箔、热过孔或散热铜箔扩展，以降低结-壳温差并提升功率耗散能力（Pd=4W 额定值需结合 PCB 散热评估）。
五、典型应用
- 同步整流器与 DC-DC 转换器（中功率）
- 电机驱动与 H 桥模块（作为半桥低侧或高侧器件）
- 开关电源、负载开关与电池保护电路
- 汽车与工业控制电子（高温耐受、双通道节省 PCB 面积）
六、PCB 布局与使用建议
- 电流回路使用短而粗的走线，减小寄生电感与温升。
- 在开关节点并联低 ESR 去耦电容以抑制尖峰，门极加适当门阻以控制 di/dt 并减少振铃。
- 若并联使用多个通道以增强电流能力，应保证门极同步驱动并匹配热分布。
- 避免长期超过 Pd 额定功耗，必要时采用散热片或增加过孔散热。
七、封装与订购信息
- 品牌：VBsemi(微碧半导体)
- 型号：VBA3638
- 封装：SO-8
- 建议在采购时确认批次与温度等级，及是否通过相关认证（如汽车级需求请与厂方确认 AEC-Q 等级）。
VBA3638 在中等电压（60V）与中等电流（7A）应用中提供了低 RDS(on) 与适度门极电荷的平衡，适合需要双通道且空间受限的电子系统。
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