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VBsemi SI2301BDS-T1-GE3-VB SI2301BDS
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VBsemi SI2301BDS-T1-GE3-VB
- Type
- VBSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VBSEMI
- Electronic Component
- SI2301BDS-T1-GE3-VB
- Electronic Component
- 1
- Package
- SOT-23(TO-236)
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.054g
- Electronic Component
- 1
- Electronic Component
- BM0265842978
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI2301BDS-T1-GE3-VB P沟道MOS场效应管产品概述
一、基本信息与封装规格
SI2301BDS-T1-GE3-VB是VBsemi（微碧半导体） 推出的P沟道增强型MOS场效应管，采用行业通用的SOT-23小型表面贴装封装（典型尺寸约2.9×2.5×1.1mm），适配高密度PCB设计，尤其适合对空间要求严格的便携电子设备。
二、核心电气参数解析
该器件关键参数覆盖低中功率应用场景，核心性能指标如下：
- 电压与电流能力：漏源击穿电压（Vdss）为20V，连续漏极电流（Id）可达4A（25℃时），满足多数12V/5V电源系统的负载驱动需求；
- 导通损耗控制：栅源电压（Vgs）为10V时，导通电阻（RDS(on)）低至60mΩ，显著降低导通状态下的功率损耗，提升能效；
- 驱动特性：阈值电压（Vgs(th)）为1.5V，易被普通MCU（3.3V/5V单片机）直接驱动，无需额外驱动电路；栅极电荷量（Qg）仅10nC（Vgs=4.5V时），开关速度快，适合高频小信号控制；
- 电容与热特性：输入电容（Ciss）835pF、反向传输电容（Crss）155pF、输出电容（Coss）180pF，电容特性稳定；最大耗散功率（Pd）2.5W，工作温度范围宽至-55℃~+150℃，支持工业级环境长期稳定运行。
三、典型应用场景
基于小封装、低损耗、易驱动的特点，该器件广泛应用于：
- 便携电子设备：蓝牙耳机、智能手环、智能手表等穿戴设备的电源开关、电池充放电控制；
- 移动电源与充电器：5V/2A输出的负载开关、过流保护电路；
- 小型家电与IoT终端：智能插座、温湿度传感器等低功率设备的电源管理模块；
- 汽车辅助电子：车载小功率LED驱动、后视镜控制电路（宽温范围适配车载环境）。
四、产品优势总结
SI2301BDS-T1-GE3-VB在同类器件中具备明显竞争力：
- 小型化设计：SOT-23封装节省PCB空间，适配轻薄化产品趋势；
- 高能效平衡：低导通电阻（60mΩ@10V）兼顾导通损耗，低栅极电荷（10nC）保障开关速度；
- 宽温可靠性：-55℃~+150℃工业级温度范围，适应极端环境；
- 驱动兼容性：1.5V阈值电压，可直接由常见MCU驱动，简化电路设计；
- 成本效益：VBsemi成熟工艺下的高性价比器件，适合批量应用。
该器件是低中功率P沟道MOS的实用选择，能有效满足便携设备、电源管理等场景的开关控制需求，为产品设计提供稳定可靠的解决方案。
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