WMSIC Electronic Components

WILLSEMI WPM3027-3/TR WPM3027

ModelWPM3027-3/TR
PackageDFN1006-3L
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WPM3027-3 / TR
Type
WILLSEMI
Minimum package
10000 个

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WPM3027-3/TR
Electronic Component
1
Package
DFN1006-3L
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.013g
Electronic Component
1
Electronic Component
BM0263518097
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
320mW
Electronic Component
Electronic Component
Electronic Component
10000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WPM3027-3/TR 产品概述

一、器件简介

WPM3027 是 WILLSEMI(韦尔)推出的一款 P 沟道增强型 MOSFET,采用先进沟槽工艺和优化设计,针对低功耗开关和电源管理场景进行了电气与封装的平衡。器件适合用作高侧开关、DC-DC 变换器和充电/反向阻断电路的功率开关元件,尤其在需要低栅极电荷以降低开关损耗的场合表现优异。

二、主要规格(典型/标称)

  • 类型:P 沟道增强型 MOSFET
  • 漏源耐压 Vdss:30 V
  • 连续漏极电流 Id:570 mA
  • 导通电阻 RDS(on):650 mΩ @ VGS = -4.5 V(标称)
  • 阈值电压 VGS(th):|≈1.0 V|(建议以数据手册为准)
  • 总栅极电荷 Qg:1.45 nC @ 4.5 V
  • 输入电容 Ciss:110 pF;反向传输电容 Crss:11 pF;输出电容 Coss:18 pF
  • 耗散功率 Pd:320 mW
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:DFN1006-3L(小型贴片,适合高密度布局)
  • 包装形式:WPM3027-3/TR(卷带供料)

三、主要特点与优势

  • 低栅极电荷(Qg ≈ 1.45 nC),在频繁开关场合可显著降低驱动能耗与开关损耗。
  • 适中的 RDS(on) 在低电流、高侧开关应用中能提供稳定的导通性能。
  • 小体积 DFN1006-3L 封装,适合移动设备和高密度电源板设计,提供良好的热性能与可焊性。
  • 宽温度范围和稳健工艺,适合汽车级或工业级温度要求的延伸应用(请依据具体认证与应用场景验证)。

四、典型应用

  • 便携式设备电源侧高侧开关与负载断电控制
  • 低功率 DC-DC 变换器中的高侧开关或同步开关(在适当拓扑下)
  • 电池组充电/反向电流保护、能量管理电路
  • 低速开关/通断控制场合的电子开关替换传统双向开关

五、使用建议与注意事项

  • 栅极驱动:标称 RDS(on) 测试在 VGS = -4.5 V 下,实际设计中应保证驱动电压幅值以获得所需导通性能;请参考完整数据手册确认器件最大允许 VGS。
  • 热管理:器件 Pd 为 320 mW,DFN1006-3L 封装热阻相对较大,建议在 PCB 布局时在器件底部与接地平面增加铜箔或热铜通孔以增强散热。
  • 布局与钳位:高速开关时注意减小栅极回路寄生电感,并在必要时加入合适的门极电阻或瞬态抑制措施以防振铃与过冲。
  • 老化与可靠性:在苛刻环境或高温长期运行下,请依据厂商完整可靠性报告选择适当的 derating 策略。

如需完整电气特性曲线、最大额定值、引脚定义和典型应用电路图,请参考厂商数据手册或联系供应商获取 WPM3027-3/TR 的详细资料与样片支持。

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