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WILLSEMI WPM2031-3/TR WPM2031
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WILLSEMI WPM2031-3 / TR
- Type
- WILLSEMI
- Minimum package
- 8000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WILLSEMI
- Electronic Component
- WPM2031-3/TR
- Electronic Component
- 1
- Package
- SOT-723
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.014g
- Electronic Component
- 1
- Electronic Component
- BM69417197
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 420mW
- Electronic Component
- Electronic Component
- Electronic Component
- 8000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WPM2031-3/TR 产品概述
一、产品基本信息
WPM2031-3/TR 是一款由韦尔半导体（WILLSEMI）生产的P沟道场效应管（MOSFET），其在多个电子应用中展现出优异的性能。该产品封装为SOT-723，具有紧凑的体积和良好的散热特性，能够适应各种空间受限的应用需求。其额定电压为20V，最大持续漏电流为600mA，此特性特别适合中低压的电源管理和开关控制电路。
二、关键特性
工作电压与电流:
- 最大漏源电压（Vds）：20V
- 额定漏电流（Id）：600mA 此规格使得WPM2031-3/TR非常适合用于低电压电源开关、负载开关及电机驱动。
功耗:
- 功率耗散：360mW 在合理的工作条件下，该MOSFET能够有效地根据其功率耗散限制发热，延长元件使用寿命，提高系统的整体稳定性。
封装特性:
- 封装形式：SOT-723
- 尺寸小巧，使其适合于空间有限的应用场合，减少PCB的占用面积。
高性能: WPM2031-3/TR具备较低的Rds(on)（导通电阻），有助于确保高效率的电能传输，同时降低热量的产生，提升系统的整体性能。
三、应用场景
WPM2031-3/TR的特性使其在许多应用中表现出色，包括但不限于：
电源开关: 在开关电源或DC-DC转换器中转换电流，能够有效地控制电源的开关状态，确保电源的稳定性和可靠性。
负载开关: 用于自动或手动控制负载的连接与断开，能够保护下游电路并提高系统的安全性。
信号放大: 在某些射频或模拟信号应用中作为信号放大器使用，可以有效地传递信号。
电机驱动: 在小型电机驱动电路中，WPM2031-3/TR能够精确控制电机的开启和关闭，实现高效操控。
消费电子产品: 适用于手机、平板、智能家居设备等，提供电源管理和开关控制，提升用户体验。
四、市场需求与趋势
随着科技的持续进步，电子产品在性能、安全性和能效上的要求不断提高，WPM2031-3/TR作为一种高效的电源管理解决方案，具有良好的市场前景。在电动汽车、物联网设备、便携式电子设备等新兴应用的推动下，MOSFET的需求将会持续增长。其小型化、高效率及可靠性将满足未来市场对轻量级及高效能元器件的需求。
五、总结
WPM2031-3/TR P沟道MOSFET以其卓越的电性能、紧凑的封装和适应性广泛的应用场景，成为了现代电子产品中不可或缺的高效元器件。韦尔通过不断提升技术水平，确保其产品在市场中的竞争力及用户的信赖。这款MOSFET不仅满足了当前市场的需求，更具备了持续发展的潜力，值得广大设计工程师采纳与应用。
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