WMSIC Electronic Components

WILLSEMI WPM3021-8/TR WPM3021

ModelWPM3021-8/TR
PackageSOP-8
BrandWILLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
WILLSEMI WPM3021-8 / TR
Type
WILLSEMI
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
WILLSEMI
Electronic Component
WPM3021-8/TR
Electronic Component
1
Package
SOP-8
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.195g
Electronic Component
1
Electronic Component
BM0229212478
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
3.8W
Electronic Component
Electronic Component
Electronic Component
4000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WPM3021-8/TR 产品概述

WPM3021-8/TR 是 WILLSEMI(韦尔)推出的一款高性能 P 沟道场效应管(P‑MOSFET),面向中低压、高电流的开关与电源管理应用。器件在 30V 耐压下提供较低导通电阻与较高连续漏极电流能力,配合 SOP-8 封装,适合 PCB 贴片化的电源开关、负载切换与保护电路方案。

一、主要规格一览

  • 器件类型:P 沟道 MOSFET(P‑MOSFET)
  • 型号:WPM3021-8/TR(WILLSEMI)
  • 漏源电压 Vdss:30 V
  • 连续漏极电流 Id:13 A(器件额定值,实际取决于散热条件)
  • 导通电阻 RDS(on):15 mΩ(在 VGS = -5 V、Id = 7 A 时测得)
  • 阈值电压 VGS(th):约 1.8 V(阈值幅值,P 型器件实际使用时以 VGS = -1.8 V 为触发方向)
  • 耗散功率 Pd:3.8 W(SOP-8 封装条件下)
  • 总栅极电荷 Qg:38 nC(在 |VGS| = 10 V 测得)
  • 输入电容 Ciss:2.106 nF(在 15 V 条件)
  • 输出电容 Coss:353 pF(在 15 V 条件)
  • 反向传输电容 Crss:274 pF(在 15 V 条件)
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SOP-8

二、器件特点与优势

  • 低导通损耗:15 mΩ 的 RDS(on) 在中小电流范围内能显著降低导通压降,适合 12V/24V 系统的高侧开关和负载分配场景。
  • 合理的电流能力:13 A 的额定连续电流使其可用于电源开关、逆变辅助开关、负载断开等应用(需考虑 PCB 散热能力)。
  • 中等栅极电荷:Qg = 38 nC 表明在驱动时对驱动器要求适中,既可用 MCU+驱动电路直接驱动,也适用于专用驱动器以获得更快开关速度。
  • 宽温度范围:适用于车载、工业和通信等对温度要求较高的应用领域。
  • SOP-8 贴片封装:便于自动化贴装与批量生产,但相较于大功率 DPAK 等封装对 PCB 散热依赖更高。

三、典型应用场景

  • 高侧电源开关与负载切换:P 沟道器件便于实现高侧开断(门极驱动相对于源极为负向),在电池管理、便携式设备电源选择中常用。
  • 反接保护与逆向阻断:作为快速电子开关,用于电源输入端的反接保护或电源切换。
  • DC-DC 转换器中的同步元件或辅助开关(根据具体拓扑和导通需求选择)。
  • 通信与工业电源模块中的开关与保护电路。

四、设计使用建议与注意事项

  1. 散热设计
    • SOP-8 封装的 Pd = 3.8 W 是在规定的实验条件下测得,实际电流使用要结合 PCB 铜箔面积与散热层考虑。建议在器件底部与热路径上布置足够的铜皮/散热孔,必要时并联多片或选用散热器。
  2. 门极驱动
    • 对于 P 沟道 MOSFET,门极需要相对于源极施加负压(例如在 12V 系统中将 VGS 拉低到约 -5 V 可达到标称 RDS(on))。在驱动器选择与电压范围上应确保不超过器件允许的 VGS 极限(参考器件最终规格书)。
    • 受 Qg 与 Ciss 影响,开关过程中会产生开关损耗,驱动电阻与驱动速度需平衡 EMI 与损耗。
  3. 开关与稳态性能
    • Crss(274 pF)对 Miller 效应影响明显,在高速切换时需要注意栅极回路的阻抗,避免振荡或误触发。
    • 在含有反向恢复的负载(如电感负载)时应配合合适的钳位/缓冲网络(如 RC、TVS)以抑制过冲。
  4. 布局与走线
    • 尽量缩短高电流回路路径(源-漏之间),将旁路电容靠近器件布置;门极电阻应放置在靠近门极的一端以抑制寄生振荡。
  5. 可靠性与参数留量
    • 在选型时应为温升、浪涌电流与长期老化留出裕量,按实际工作温度和散热条件校核 Id 与 Pd。

五、选型建议与对比参考

  • 若目标系统为 12V/24V 高侧开关且驱动电压受限(例如只可提供 ±5V 级),WPM3021-8/TR 的 15 mΩ(|VGS|=5V)特性在中等电流负载下表现良好。
  • 在要求更低 RDS(on) 或更高功耗承受能力的场合,考虑更大封装(如 DPAK、PowerSO)或 N 沟道配合驱动器组成高侧方案(负载与效率权衡)。
  • 对于频繁高速开关场景,应综合考虑 Qg、Ciss 与 Crss,必要时选择更低栅荷或更适合高速驱动的型号。

六、总结

WPM3021-8/TR 是一款面向中低压电源管理与高侧开关的 P 沟道 MOSFET,具备 30V 耐压、13A 持续电流能力和较低的导通电阻(15 mΩ @ |VGS|=5V)。其 SOP-8 封装便于 PCB 集成,适合电池管理、负载开关与保护电路等多种应用。设计时应重点关注散热、门极驱动与布局等细节,以保证器件在目标工况下的稳定与高效运行。

如需更详细的电气特性曲线、极限参数(如最大 VGS、脉冲电流能力、热阻等)或参考封装图与 PCB 布局建议,请告知,我可以基于完整规格书提供进一步的设计支持。

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