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WINSOK WSD4038DN33
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WINSOK WSD4038DN33
- Type
- WINSOK
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WINSOK
- Electronic Component
- WSD4038DN33
- Electronic Component
- 1
- Package
- DFN-8(3x3)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.129g
- Electronic Component
- 1
- Electronic Component
- BM0264549095
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2.1W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WSD4038DN33 产品概述
一、产品简介
WSD4038DN33 是微硕（WINSOK）推出的一款高性能沟槽型 N 沟道 MOSFET，额定漏源电压为 40V，适用于中低压同步降压转换器与功率开关应用。器件采用 DFN-8 (3×3 mm) 紧凑封装，具有高单元密度和较低导通电阻，兼顾导通损耗与开关性能，适合对效率与封装面积有严格要求的电源方案。
二、关键参数
- 类型：N 沟道 MOSFET
- 漏源耐压 Vdss：40V
- 连续漏极电流 Id：38A（封装与散热条件相关）
- 导通电阻 RDS(on)：13 mΩ @ VGS=10V
- 阈值电压 VGS(th)：2.5V
- 总栅极电荷 Qg：28nC @ VGS=10V（影响开关损耗）
- 输入电容 Ciss：1.125nF；输出电容 Coss：132pF；反向传输电容 Crss：70pF
- 功耗 Pd：2.1W（在规定散热条件下）
- 工作温度范围：-55℃ ~ +150℃
- 封装：DFN-8 (3×3)
三、主要特性
- 低 RDS(on) 与高电流能力：13mΩ@10V 在小封装下提供较低导通损耗，适合高密度电源设计。
- 平衡的开关性能：Qg=28nC 与较小的 Crss（70pF）在高速开关时可兼顾开关损耗与栅极驱动需求。
- 小体积、高可靠性：DFN-8(3×3) 封装节省 PCB 面积，器件通过 100% 环境应力筛选（EAS），适合量产可靠性要求。
- 环保合规：符合 RoHS 与绿色产品要求。
四、典型应用场景
- 同步降压（Buck）转换器主开关/低侧开关
- 服务器与通信电源模块的点对点供电
- 车载电子（12V/24V 较低电压域）及工业电源（受限于 40V 最大电压）
- 电机驱动前端开关与高频开关电源
五、设计与布局建议
- 驱动电压：为获得标称 RDS(on)，推荐栅压 VGS=10V；若使用 5V 驱动，需评估导通电阻上升与损耗增大。
- 栅极驱动布局：栅极走线尽量短、粗，靠近驱动源放置去耦电容与阻尼网络以抑制振铃。
- 散热处理：DFN 封装需借助大面积铜箔与过孔导热至内层或底层散热，确保器件在高电流下温升可控，以发挥 38A 能力与 2.1W 功耗条件。
- 保护与吸收：在高速开关环境下，Crss 导致的 Miller 效应需在驱动设计中考虑，可在必要时增加 Rg 或 RC 吸收网络减小瞬态尖峰。
- PCB 着焊：中心热焊盘应充分焊接，保证机械与热连接，避免虚焊影响热阻与可靠性。
六、可靠性与选型提示
WSD4038DN33 针对同步开关电源场景做了性能优化，兼顾导通损耗与开关特性。选型时应根据实际工作电压、开关频率和散热条件综合评估：在高频且频繁开关的系统中需权衡 Qg 导致的驱动损耗；在大电流持续工作时需重点考虑 PCB 散热方案和结温限制。若工作电压或能量脉冲更高，可考虑更高 Vdss 规格的器件。
总结：WSD4038DN33 在 40V/38A 的等级上，以 13mΩ 的低导通电阻与适中的栅极电荷提供了良好的能效与封装密度，适合空间受限且对效率有较高要求的同步降压与功率开关应用。
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