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WINSOK WSD6035DN33
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- WINSOK WSD6035DN33
- Type
- WINSOK
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- WINSOK
- Electronic Component
- WSD6035DN33
- Electronic Component
- 1
- Package
- DFN3X3-8L
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.05g
- Electronic Component
- 1
- Electronic Component
- BM0264498705
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 34.7W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WSD6035DN33 — 高性能沟槽式双N沟道MOSFET产品概述
一、产品简介
WSD6035DN33 是微硕（WINSOK）推出的一款高密度沟槽式双N沟道MOSFET，封装为 DFN3X3-8L。器件在60V耐压下，提供单芯片内双MOSFET配置，适合空间受限且需高效率并联或同步拓扑的电源设计。产品符合RoHS并通过100% EAS认证，具备工业级功能可靠性。
二、主要电气参数
- 漏源电压（Vdss）：60V
- 连续漏极电流（Id）：40A（单管）
- 导通电阻（RDS(on)）：20mΩ @ Vgs=10V
- 耗散功率（Pd）：34.7W（环境依赖，需合理散热）
- 阈值电压（Vgs(th)）：1.2V
- 总栅极电荷（Qg）：12.6nC @ Vgs=4.5V
- 输入电容（Ciss）：1.37nF；输出电容（Coss）：85pF；反向传输电容（Crss）：64pF
- 工作温度范围：-55℃ 到 +150℃
三、性能亮点
- 低导通电阻与高电流能力：20mΩ 的低RDS(on) 在10V栅压下有利于降低导通损耗，适合中大电流应用。
- 中等栅极电荷：12.6nC 的Qg 在保证切换速度的同时，可控制驱动功耗，适配常用驱动器或电源IC。
- 低寄生电容：较小的 Crss 和 Coss 有利于减小开关损耗和换向振铃，提高高频开关效率。
- 紧凑封装：DFN3X3-8L 尺寸小，利于高密度PCB布局和热路径设计。
四、典型应用场景
- 同步降压转换器（Buck）和同步整流
- 负载开关、功率分配与电源管理模块
- 电机驱动与便携式电源系统
- 服务器与通信设备的点对点电源
五、设计建议与注意事项
- 驱动电压：推荐在10V栅压下工作以获得标称RDS(on)；在逻辑电平驱动下需确认导通损耗。
- 散热处理：尽管Pd=34.7W，但DFN封装热阻相对较高，建议通过底铜铺大面积散热、过孔或散热片降低结温。
- 器件配对与布局：双MOSFET在单封装内便于实现高密度布局，建议对称走线以减小电感和热点。
- 可靠性：符合RoHS且通过EAS认证，适用于商业与工业级电源设计。
六、总结
WSD6035DN33 在60V额定下结合低RDS(on)、适中Qg 和小型DFN封装，为同步降压和高密度电源解决方案提供了良好的性价比选择。在实际应用中，应重视驱动电压与热管理，以发挥其最佳性能。若需进一步的原理图参考、封装尺寸或热阻参数，请参阅厂方完整数据手册或联系供应商获取支持。
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