WMSIC Electronic Components

WINBOND W25N512GVEIG

ModelW25N512GVEIG
PackageWSON-8(6x8)
BrandWINBOND
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
WINBOND W25N512GVEIG
Type
WINBOND
Unit
Electronic Component
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
WINBOND
Electronic Component
W25N512GVEIG
Electronic Component
1
Package
WSON-8(6x8)
Electronic Component
NAND FLASH
Electronic Component
0.254g
Electronic Component
1
Features
OTP and; ECC; positions
Electronic Component
BM0257271074
Electronic Component
512Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
2.7V~3.6V
Current
50uA
Interface Type
SPI

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

W25N512GVEIG 产品概述

一、概述

W25N512GVEIG 为 WINBOND(华邦)出品的一款 512Mbit SPI/QUAD Flash 存储器,采用 WSON-8(6×8mm)封装。器件支持标准 SPI 与 Quad SPI 接口,最高时钟频率可达 166MHz,适用于需要大容量、低功耗与快速随机/顺序读写的嵌入式存储应用。

二、主要规格

  • 存储容量:512Mbit(64MByte)
  • 接口类型:SPI / QUAD SPI
  • 最高时钟频率:166MHz
  • 工作电压:2.7V ~ 3.6V
  • 工作温度:-40℃ ~ +85℃
  • 待机电流:约 50μA
  • 擦写寿命:10万次(典型)
  • 数据保留(TDR):10 年
  • 封装:WSON-8(6×8)

三、时序与性能

  • 写周期时间(Tw):50ns(页面内字节写入步进时序参考)
  • 页写入时间(Tpp):典型 250μs(单页编程完成所需时间)
  • 块擦除时间(tBE):典型 2ms(单块擦除)
    在 166MHz 时钟下,Quad SPI 模式可显著提高顺序读取吞吐量;理论传输速率受时钟与总线宽度限制,实际应用中需考虑控制器与系统总线开销。

四、功能特点

  • 支持 Quad 输出/IO 模式以提升读速率
  • 低功耗待机与快速唤醒,适合电池供电设备
  • 高擦写寿命与长期数据保持能力,可靠性高
  • 标准化指令集,便于在主控端快速集成与迁移

五、封装与布局建议

WSON-8(6×8)小尺寸封装利于 PCB 高密度布局。建议在 VCC 近旁放置 0.1μF 与 1μF 陶瓷去耦电容,避免长引线,保证电源完整性。对 CE#/WP/HOLD 信号采用合适上拉/下拉电阻以防空闲状态漂移。

六、典型应用与设计注意

适用于固件存储、文件系统、图像或多媒体数据缓存、嵌入式操作系统镜像等场景。设计时应注意:采用页对齐写入以确保最短编程时间;在频率接近 166MHz 时检查 PCB 时钟完整性与信号完整性;对高可靠性要求应用应实现擦写均衡(wear leveling)与坏块管理。

七、可靠性与使用建议

器件在-40℃至+85℃范围内稳定工作,数据保留 10 年,擦写寿命 10 万次。建议在高温或频繁写入场景下增加错误检测与恢复机制,合理规划擦写策略以延长使用寿命。总体而言,W25N512GVEIG 为追求容量与性能平衡的嵌入式存储方案提供了成熟且可靠的选择。

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