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XNRUSEMI XR100N03F
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR100N03F
- Type
- XNRUSEMI
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR100N03F
- Electronic Component
- 1
- Package
- PDFN5060-8L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.177g
- Electronic Component
- 1
- Electronic Component
- BM0264844057
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 75W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR100N03F 产品概述
一、产品简介
XR100N03F 是 XNRUSEMI（新锐）推出的一颗高单元密度沟槽式 N 沟道 MOSFET，额定漏源电压 Vdss = 30V，连续漏极电流 Id = 100A，典型导通电阻 RDS(on) = 3.6mΩ（VGS=10V）。封装为 PDFN5060-8L，工作温度范围 -55℃~+150℃，符合 RoHS 与绿色产品要求，并提供 100% EAS 保证及完整功能可靠性认证，专为大多数同步降压转换器与高效率功率管理场景设计。
二、关键电气参数（典型/额定）
- 漏源电压：30V
- 连续漏极电流：100A
- 导通电阻：3.6mΩ @ VGS=10V
- 耗散功率：75W
- 阈值电压：VGS(th) = 2.5V
- 总栅极电荷：Qg = 48nC @ 10V
- 输入电容：Ciss = 2.764nF
- 输出电容：Coss = 289pF
- 反向传输电容：Crss = 265pF
三、产品亮点与应用价值
- 低 RDS(on) 与较高电流承载能力，适合高效率、低导通损耗的同步整流与降压电源。
- 合理的栅极电荷（48nC）在保证开关速度的同时兼顾驱动功耗，适用于中高开关频率应用。
- 紧凑 PDFN5060-8L 封装有利于系统高密度布板与良好导热，有助于散热管理与功率密度提升。
- 通过 RoHS 与可靠性认证，适合工业与消费类电源模块使用。
四、应用场景
- 同步降压转换器（主开关或同步整流）
- 服务器与通信电源管理模块
- 高性能DC-DC转换、负载开关与电机驱动前级
- 电池供电系统与便携设备电源
五、设计建议与注意事项
- 为了达到标称 RDS(on)，建议栅极驱动电压采用 10V；若仅以逻辑电平（如 4.5V）驱动，导通电阻会显著上升，应在选型时验证实际导通损耗。
- Qg=48nC 表明驱动器需具备相应峰值驱动能力，设计时计算驱动损耗 P = Qg·Vdrive·fSW。高频应用推荐使用低阻抗、高峰值电流的栅极驱动器，并根据 EMI 与振铃情况配置合适的栅阻。
- 布局方面尽量缩短功率回路（尤其是源-漏电流回路）以降低寄生电感，使用足够的铜厚与过孔增强散热；若需并联器件，确保门极匹配与电流均分。
- 注意热设计：尽管器件 Pd 标称为 75W，实际可用耗散能力强烈依赖于 PCB 散热、封装接地与环境条件，请参照完整数据手册中的 RθJA/RθJC 与 SOA 曲线进行热仿真与裕度评估。
- 在开关瞬态中，Coss 与 Crss 会影响回收与能量吸收，需根据应用评估能量回流管理（如合适的续流二极管、RC 缓冲或吸收网络）。
综上，XR100N03F 在 30V 级别功率管理领域以低 RDS(on) 与良好单元密度提供优秀的能效与开关性能，适合用于高效率同步降压与各类中高功率开关电源设计。若需详细的热阻、极限值与开关性能曲线，请参照完整数据手册或联系厂家技术支持。
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