WMSIC Electronic Components

XNRUSEMI XRS40N06D

ModelXRS40N06D
PackagePDFN3333-8L
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XRS40N06D
Type
XNRUSEMI
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XRS40N06D
Electronic Component
1
Package
PDFN3333-8L
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.177g
Electronic Component
1
Electronic Component
BM0264993116
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
60W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XRS40N06D N沟道功率MOSFET产品概述

XRS40N06D是新锐半导体(XNRUSEMI)推出的低压大电流N沟道增强型MOSFET,采用PDFN-8L(5×6mm)封装,针对60V级功率转换、电机驱动、车载电子等场景优化设计,具备低导通损耗、高开关速度、宽温度适应性等核心优势,可满足高密度、高效率的功率应用需求。

一、产品定位与核心应用场景

XRS40N06D聚焦60V低压功率领域,针对需要40A级大电流、小体积、高可靠性的场景,典型覆盖:

  • 消费电子:笔记本适配器、65W+快充充电器、移动电源;
  • 车载电子:12V系统DC-DC转换器、车载充电器、小型雨刮电机驱动;
  • 工业控制:低压伺服电机驱动、PLC电源模块、小型开关电源;
  • 通信设备:基站低压供电、服务器冗余电源。

其设计平衡了导通损耗与开关损耗,适配从低频线性应用到100kHz以上高频开关电源的多种场景。

二、关键电气参数解析

XRS40N06D的核心参数围绕“低压大电流、高效率”优化,关键参数及实际意义如下:

参数 数值 应用价值 漏源击穿电压(VDSS) 60V 为50V以内的系统提供20%安全裕量,避免过压损坏; 连续漏极电流(ID) 40A 25℃环境下长期稳定工作的最大电流,覆盖多数低压大电流需求; 导通电阻(RDS(on)) 16mΩ@VGS=10V 漏源导通损耗核心指标(损耗=I²×R),40A电流下仅产生25.6W损耗,显著降低发热; 栅极电荷量(Qg) 22nC 驱动所需总电荷,低Qg可减少开关损耗,提升开关频率; 阈值电压(VGS(th)) 2.5V@ID=250μA 适配普通MCU/驱动IC(如IR2104),无需特殊高压驱动电路; 耗散功率(PD) 60W 25℃下最大允许功率,结合PDFN封装可有效控制结温; 工作温度范围 -55℃~+150℃ 覆盖工业级与车载级温度要求,适应极端环境波动。

三、封装与物理特性

XRS40N06D采用PDFN-8L(5×6mm)表面贴装封装,具备三大核心优势:

  1. 散热效率高:漏极引脚直接暴露在封装底部,可通过PCB铜箔直接散热,热阻低至1.5℃/W(典型值),比传统TO-252封装提升30%以上;
  2. 小体积高密度:5×6mm尺寸仅为TO-220封装的1/5,适合便携式设备与高密度PCB设计;
  3. 布线友好:8引脚布局中,漏极(D)分布两侧方便铜箔连接,源极(S)接地,栅极(G)靠近驱动电路,降低布线干扰。

四、性能优势与系统价值

XRS40N06D的参数优势可直接转化为系统级价值:

  • 高效率:16mΩ低导通电阻+22nC低栅极电荷,使开关电源效率提升至95%以上(50V/40A输出),减少散热片成本;
  • 高可靠性:-55~150℃宽温+60V击穿电压,适应车载高低温、工业环境波动,降低失效风险;
  • 设计简化:2.5V阈值电压适配通用驱动,无需额外升压;PDFN小体积可缩小PCB尺寸,降低BOM成本;
  • 高频适配:开关时间(ton/toff)<100ns,支持LLC谐振电源等高频拓扑。

五、典型应用电路参考

以12V转48V DC-DC升压转换器为例,XRS40N06D作为开关管的设计要点:

  • 输入:12V/20A,输出:48V/5A;
  • 驱动:IR2104半桥驱动,适配2.5V阈值电压;
  • 散热:PCB底部漏极区域铺设1oz铜箔(面积≥10cm²),结温控制在120℃以内(满足150℃上限);
  • 保护:搭配TVS管(60V)防止过压,电流传感器实现过流保护。

XRS40N06D通过参数优化与封装设计,成为低压大电流功率应用的高性价比选择,覆盖消费电子、工业、车载等多领域需求。

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