WMSIC Electronic Components

XNRUSEMI XR3402B

ModelXR3402B
PackageSOT-23
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR3402B
Type
XNRUSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR3402B
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0264844070
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
850mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR3402B 产品概述

XR3402B 是 XNRUSEMI(新锐)推出的一款高单元密度沟槽式 N 沟道 MOSFET,采用 SOT-23 封装,专为小功率开关与负载开关应用优化。器件在 30V 漏源电压 (Vdss) 下,可提供 2A 连续漏极电流 (Id),在 Vgs=10V 时典型导通电阻仅 98mΩ,兼顾低导通损耗与小封装的热限制,适合便携式与空间受限的电源管理场景。

一、主要规格(典型/额定)

  • 类型:N 沟道 MOSFET
  • 漏源电压 Vdss:30V
  • 连续漏极电流 Id:2A
  • 导通电阻 RDS(on):98mΩ @ Vgs=10V
  • 耗散功率 Pd:850mW(SOT-23 封装热极限)
  • 阈值电压 Vgs(th):1V(典型)
  • 总栅极电荷 Qg:2.7nC @ Vgs=4.5V
  • 输入电容 Ciss:184pF;输出电容 Coss:38pF;反向传输电容 Crss:28pF
  • 工作温度范围:-55℃ ~ +150℃
  • RoHS 与绿色环保合规,通过全功能可靠性认证

二、产品特性与优势

  • 沟槽式高单元密度工艺,单位面积导通电阻低,提升效率并减少导通损耗。
  • SOT-23 小封装适配高密度 PCB 布局,便于便携设备与模块化电源设计。
  • 低阈值(≈1V)有利于低电压驱动场景;但需注意 RDS(on) 给定值为 Vgs=10V,4.5V 驱动下导通电阻会增大。
  • 低栅极电荷(2.7nC @4.5V)有利于降低开关驱动能耗与快速切换需求。

三、典型应用

  • 负载开关、电源路径选择与电池管理(PMIC)
  • 小功率 DC-DC 降压/升压转换器的同步/非同步开关
  • 移动设备、物联网终端、便携仪器的电源开关与保护
  • LED 驱动与小电机驱动等对体积与效率有要求的场景

四、注意事项与设计建议

  • 热管理:SOT-23 封装 Pd=850mW,需要合理拓展 PCB 铜箔面积与热散布,避免长期大电流下过热。
  • 驱动电压:若系统仅提供 4.5V 驱动,建议评估在 Vgs=4.5V 下的 RDS(on) 并确认热耗;若可能优先使用接近 10V 的栅极驱动以达到标称 RDS(on)。
  • 开关速度与 EMI:较低的 Ciss(184pF)和 Qg 有利于快速切换,但建议在高速开关时加串联栅极电阻与适当布局,并做好去耦以抑制振铃与 EMI。
  • 保护与极限:器件 Vdss=30V,请确保在瞬态与浪涌条件下电压不会超出极限;若需承受能量吸收,请参考厂方完整可靠性与击穿特性说明。

XR3402B 以其小封装、低 Qg 与较低 RDS(on) 的特性,在需兼顾体积与效率的小功率开关场景中表现优异,适合用于消费类电子与工业控制等多种应用。若需封装图、典型应用电路或温度特性曲线,可联系供应商获取完整规格书与可靠性报告。

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