WMSIC Electronic Components

XNRUSEMI XR2318

ModelXR2318
PackageSOT-23
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR2318
Type
XNRUSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR2318
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.039g
Electronic Component
1
Electronic Component
BM0264844142
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.6W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
40V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR2318 产品概述

一、概述

XR2318 是 XNRUSEMI(新锐)推出的一款高单元密度沟槽式 N 沟道 MOSFET,额定漏源电压 40V,适用于同步降压转换器及各类开关电源场合。器件符合 RoHS 与绿色产品要求,并经 100% 全功能可靠性保证,适合工业与消费电子的中小功率设计。

二、主要参数

  • 类型:N 沟道
  • 漏源电压 Vdss:40V
  • 连续漏极电流 Id:5A
  • 导通电阻 RDS(on):40mΩ @ Vgs=10V
  • 阈值电压 Vgs(th):2.2V
  • 总栅极电荷 Qg:11nC @10V
  • 输入电容 Ciss:435pF;反向传输电容 Crss:35pF;输出电容 Coss:58pF
  • 耗散功率 Pd:1.6W
  • 工作结温范围:-55℃ ~ +150℃
  • 封装:SOT-23

三、性能特点

XR2318 在导通电阻与栅极电荷之间取得平衡:在 Vgs=10V 驱动下具有较低的 RDS(on),可有效降低导通损耗;中等 Qg 与 Ciss 值利于在中高频率下保持较好的开关性能。小封装利于高密度 PCB 布局与自动化贴装。

四、典型应用

适合作为同步降压转换器的低侧开关、便携电源管理、升降压转换器以及各类需要 40V 等级、几安培电流能力的小功率开关应用场景。建议在 10V 门驱动条件下使用以达到标称导通电阻性能。

五、布局与热管理建议

SOT-23 封装体积小,Pd=1.6W 在无散热片条件下受限,建议在 PCB 上为 MOSFET 提供充足的散热铜箔,优化电源回路宽厚铜层以降低寄生电感与温升。门极驱动器应具备足够电流以快速驱动 Qg,避免过长上升/下降时间引起开关损耗增加。

六、采购与合规

品牌:XNRUSEMI(新锐);符合 RoHS 与绿色产品要求。具体引脚排列、最大额定值及时序等请参考厂方完整数据手册以完成最终设计验证。

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