WMSIC Electronic Components

XNRUSEMI XR20N04

ModelXR20N04
PackageTO-252-3L
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR20N04
Type
XNRUSEMI
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR20N04
Electronic Component
1
Package
TO-252-3L
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
1g
Electronic Component
1
Electronic Component
BM0264974437
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
4W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
40V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR20N04 产品概述

XR20N04 是 XNRUSEMI(新锐)推出的一款高细胞密度沟槽式 N 沟道功率 MOSFET,面向同步降压转换器及高频开关应用。器件在 40V 漏源电压等级上实现了较低导通电阻与合理的栅极电荷折衷,适合要求高效率与紧凑布局的电源方案。

一、主要参数

  • 类型:N 沟道功率 MOSFET(沟槽工艺)
  • Vdss(漏源耐压):40V
  • Id(连续漏极电流):20A
  • RDS(on)(导通电阻):40mΩ @ Vgs=10V
  • Pd(耗散功率):4W
  • Vgs(th)(阈值电压):约 2.2V
  • Qg(总栅极电荷):11nC @ Vgs=10V
  • Ciss(输入电容):435pF; Coss(输出电容):58pF; Crss(反向传输电容):35pF
  • 工作温度范围:-55℃ ~ +150℃
  • 封装:TO-252-3L(DPAK)
  • 额外特性:符合 RoHS,100% 保证雪崩能量耐量(EAS)

二、特点与优势

  • 低 RDS(on) 与适中栅极电荷:40mΩ 的导通电阻在 40V 级别中兼顾导通损耗与开关损耗;11nC 的栅极电荷利于中高频开关场合,实现较低的驱动能耗。
  • 高细胞密度沟槽工艺:提升导通效率、减小芯片面积,提高可靠性与热耗散均匀性。
  • 完整的可靠性认证:100% 雪崩能量测试保证在开关瞬态或反向恢复事件中具备良好安全裕量。
  • 宽温区适应性:适合工业级温度范围的应用场景。

三、典型应用场景

  • 同步降压(Synchronous Buck)转换器的高侧或低侧开关管
  • 电源管理模块(PMIC)、点对点供电和多相电源系统
  • 电池供电设备、便携式电源与电机驱动的辅助开关
  • 高密度电源模块与功率因数校正(PFC)外围器件(视系统设计)

四、封装与热管理建议

  • TO-252-3L(DPAK)适合表面贴装,便于自动化装配。底部焊盘与 PCB 铜箔面积直接关系到散热能力。
  • 在高电流或连续负载下,建议增大 PCB 散热铜箔面积、使用过孔引导至底层散热平面,必要时并联器件或选用更大功率器件。
  • 关注封装引脚的焊接质量以降低接触热阻。

五、驱动与布局注意事项

  • 推荐驱动电压以 10V 为目标以获得标称 RDS(on)。Vgs 阈值约 2.2V,非严格逻辑电平驱动器件;使用 10V 栅极驱动可获得最佳导通性能。
  • 栅极电荷 Qg=11nC 意味着在高频切换时需要合适的驱动能力以控制开关损耗与过冲。选择低阻抗驱动器并在栅极附近放置退耦电容与阻尼(阻尼电阻)以抑制振铃。
  • 布局要最小化源极至负载回路的环路面积,放置肖特基或续流二极管时注意确信良好热路径与低寄生电感。

XR20N04 在中等电压、中等电流的同步降压与开关电源设计中提供了良好的性能与成本平衡,适合追求效率与可靠性的工程应用。具体极限参数与电路验证请参照完整规格书进行最终设计确认。

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