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XNRUSEMI XRS120P10G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XRS120P10G
- Type
- XNRUSEMI
- Minimum package
- 800 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XRS120P10G
- Electronic Component
- 1
- Package
- TO-263
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 2.002g
- Electronic Component
- 1
- Electronic Component
- BM0264566319
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 300W
- Electronic Component
- Electronic Component
- Electronic Component
- 800
- Voltage(Vdss)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XRS120P10G 产品概述
一、产品简介
XRS120P10G（品牌：XNRUSEMI/新锐）是一颗高压、大电流的P沟道功率MOSFET，单片数量：1个。器件额定漏源电压Vdss=100V，连续漏极电流Id=120A，适用于要求高开关电流与较高耐压的高侧开关、同步整流及电源管理场合。封装为TO-263（D2PAK），便于表面贴装并具备良好散热能力。
二、主要电气参数
- 漏源耐压：100V
- 连续漏极电流：120A（受散热条件限制）
- 导通电阻RDS(on)：12mΩ @ |Vgs|=10V（标称驱动电压）
- 耗散功率Pd：300W（需配合良好散热设计）
- 阈值电压Vgs(th)：约3V（以|Vgs|计）
- 总栅电荷Qg：136nC @ 50V（较大，驱动要求高）
- 输入电容Ciss：≈9.349nF；反向传输电容Crss≈111.2pF；输出电容Coss≈798pF
- 工作温度范围：-55℃ ~ +150℃
三、性能特点与优势
- 低导通电阻（12mΩ）带来较小的导通损耗，适合高电流路径。
- 高耐压（100V）使其在中高压电源和汽车、工业供电中具有应用空间。
- TO-263封装提供较大散热面积，便于PCB铜箔与散热片配合使用。
- 栅极电荷较大（Qg 136nC），在高频开关中需要关注驱动损耗与切换速度。
四、典型应用场景
- 高侧开关/负载断开（电池组、供电切换）
- DC-DC同步整流（中低频高电流）
- 逆接保护与电源管理模块
- 工业电源、逆变器、伺服驱动等需承受高电流与高电压的场合
五、设计与使用建议
- 栅极驱动：由于Qg与Ciss较大，推荐使用能力较强的驱动器或驱动缓冲器，短时间内提供足够电流以减少开关损耗。注意P沟道器件驱动电压以|Vgs|计（通常需驱动到约10V以达标RDS(on)）。
- 热管理：标称120A与300W耗散受限于封装与PCB散热，应采用大面积铜箔、过孔热通道或外部散热器，避免长期在高结温下工作。
- 抑制振荡与过冲：在栅极串联合适阻容（栅阻+RC缓冲）和在电源侧/负载侧加入TVS或RC缓冲网络，可抑制dv/dt引起的米勒效应和瞬态过压。
- 布局：推荐短且宽的电流回路、靠近封装的散热过孔、独立的栅极回路与接地平面，减小寄生电感。
XRS120P10G适合对导通损耗和耐压有较高要求的高电流开关应用，合理的驱动与散热设计是发挥其性能的关键。
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