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XNRUSEMI XR60N02
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR60N02
- Type
- XNRUSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR60N02
- Electronic Component
- 1
- Package
- TO252-3L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 1g
- Electronic Component
- 1
- Electronic Component
- BM0264844077
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 38W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR60N02 产品概述
一、产品简介
XR60N02 是一款高单元密度沟槽式 N 沟道 MOSFET，额定漏源电压 Vdss = 20V，适用于低压高电流场景。该器件在 4.5V 驱动下具有极低的导通电阻和适中的栅极电荷，专为同步降压转换器等开关电源应用优化设计，符合 RoHS / 绿色产品要求，并 100% 保证雪崩能量承受能力及完整功能可靠性认证。封装为 TO252-3L（DPAK），便于表面贴装和 PCB 散热处理。
二、主要电气参数
- 类型：N 沟道
- Vdss（漏源电压）：20V
- Id（连续漏极电流）：60A
- RDS(on)（导通电阻）：6.5 mΩ @ Vgs = 4.5V
- Qg（总栅极电荷）：23 nC @ 4.5V
- Vgs(th)（阈值电压）：1.0V
- Pd（耗散功率）：38W（按标准条件）
- 工作温度范围：-55℃ ~ +150℃
三、关键特性与优势
- 低导通电阻：4.5V 驱动下 6.5 mΩ，可显著降低导通损耗，适合要求高峰值/持续大电流的点对点电源。
- 适中栅极电荷：23 nC 平衡了开关损耗与导通性能，适用于中高开关频率的同步降压拓扑。
- 雪崩及可靠性：100% 雪崩耐量保证，适用于存在瞬态冲击的电源系统。
- 封装优势：TO252-3L 兼顾散热与焊接可靠性，便于大面积 PCB 铜箔散热。
四、散热与使用建议
- 封装热阻与实际 Pd 受 PCB 散热面积影响较大。为发挥标称耗散能力，应在 PCB 设计中采用大面积铜箔、加注过孔并缩短源、漏导线长度。
- 开关损耗估算：以 Vgs=4.5V、fs=500kHz 为例，门极驱动损耗约 Pgate = Qg·Vdrive·fs ≈ 23nC·4.5V·500kHz ≈ 52 mW，门极损耗较小；导通损耗示例：在 30A 连续电流下 Pcond ≈ I^2·RDS(on) = 30^2·6.5mΩ ≈ 5.85W，应确保足够散热余量。
- 建议使用低阻抗、瞬态能力强的栅极驱动器以缩短开关过渡，降低开关能量损耗并控制 EMI。
五、典型应用与设计要点
- 典型应用：同步降压转换器（点对点 VR、通信电源、工业 DC-DC）、电池管理开关、低压电机驱动与负载开关。
- 设计要点：短而宽的走线、避免长回流路径；功率回路尽量靠近器件引脚；在高电流场合可并联器件以分摊热量与降低等效 RDS(on)；外围需配置合适的 TVS 或能量回收电路以应对瞬态过电压。
六、合规与质量保证
XR60N02 属 XNRUSEMI(新锐) 品牌产品，符合 RoHS 与绿色环保标准，出厂通过完整功能可靠性认证并提供雪崩能量测试保证。具体热特性曲线、SOA、典型开关波形和封装尺寸请参考官方数据手册以获得设计级参数和限制条件。
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