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XNRUSEMI XR2012S
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR2012S
- Type
- XNRUSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR2012S
- Electronic Component
- 1
- Package
- SOP8
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.173g
- Electronic Component
- 1
- Electronic Component
- BM0264844060
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 3W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 1nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR2012S 产品概述
一、产品简介
XR2012S 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道 MOSFET，封装为 SOP8，单片 N 沟道器件。Vdss=20V、连续漏极电流 12A、导通电阻低至 8mΩ（Vgs=4.5V），针对小功率开关与负载开关场合优化，兼顾低导通损耗与良好开关特性。器件通过全功能可靠性认证，并满足 RoHS 与绿色环保要求。
二、主要参数概览
- 类型：N 沟道 MOSFET（数量：1）
- 漏源电压 Vdss：20V
- 连续漏极电流 Id：12A
- 导通电阻 RDS(on)：8mΩ @ Vgs=4.5V
- 最大耗散功率 Pd：3W
- 总栅极电荷 Qg：15nC @ 10V
- 输入电容 Ciss：≈1nF
- 反向传输电容 Crss：164pF
- 工作温度：-55℃ ~ +150℃
- 封装：SOP8
三、电气与开关性能要点
XR2012S 在 4.5V 门极电压下即可达到 8mΩ 的低导通阻，适合由 MCU 或逻辑驱动的“低电压门极”应用。Qg=15nC 属中等水平，配合 10V 门极驱动时充放电能量约为 0.5·Ciss·V^2 或近似 Qg·Vg/2（约几十到上百 nJ），驱动要求较为温和。Crss=164pF 有助于抑制 Miller 电容带来的慢变形，但在快速开关时仍需关注过冲与振荡。
四、热管理与封装注意
SOP8 封装便于 PCB 工艺，但热阻相对较高，器件的 12A 连续电流能力在实际应用中受限于散热条件。Pd=3W 是器件在规定散热条件下的耗散上限，设计时建议通过增加铜箔面积、铺大地/电源平面和必要的热铜过孔来降低结-环境热阻，必要时限制持续电流或采用并联方案。
五、典型应用场景
- 5V/12V 负载开关与电源路径切换
- 电池管理系统中低压 MOSFET 开关
- DC-DC 转换器的同步整流与次级开关（小功率）
- 电机驱动或继电器替代开关（需考虑驱动和热设计）
六、设计建议与防护
- 若需快速开关，按 Igate = Qg / td 计算驱动电流，100ns 切换大约需要 150mA 驱动能力。
- 对感性负载建议使用 TVS、RC 吸收器或缓冲网络抑制电压尖峰。
- SOP8 版面布线应尽可能缩短漏源电流回路，并加大铜面以优化散热。
- 电路调试阶段注意测量温升与导通电阻随温度的上升变化，必要时进行额定电流下的实验验证。
七、可靠性与合规
XR2012S 满足 RoHS 要求并通过全面可靠性认证，适用于工业级至消费级产品。出厂前的可靠性试验降低了长期失效风险，但在关键应用中仍建议做系统级的寿命与热循环验证。
XR2012S 以其低 RDS(on)、逻辑电平驱动兼容性和封装易用性，为中低压开关与负载管理提供了性价比较高的解决方案。设计时结合合理的热管理与驱动策略，可在小功率开关系统中获得良好效率与稳定性。
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