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XNRUSEMI XR30N03
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR30N03
- Type
- XNRUSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR30N03
- Electronic Component
- 1
- Package
- TO252-3L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.464g
- Electronic Component
- 1
- Electronic Component
- BM0264844100
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 11.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR30N03 产品概述
XR30N03 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道 MOSFET，专为同步降压转换器及高效率电源管理设计。器件在 30V 电压等级下提供低导通电阻与适度栅极电荷，兼顾导通损耗与开关速度，满足多种中大电流开关应用需求。
一、主要特性
- 类型：N 沟道 MOSFET（沟槽式）
- 漏源电压 Vdss：30V
- 连续漏极电流 Id：30A
- 导通电阻 RDS(on)：13mΩ @ Vgs=10V
- 阈值电压 Vgs(th)：2.5V（典型）
- 栅极电荷 Qg：15nC @ Vgs=10V
- 输入电容 Ciss：551pF；反向传输电容 Crss：93pF；输出电容 Coss：108pF
- 耗散功率 Pd：11.5W（见封装与散热注意）
- 工作温度范围：-55℃～+175℃
- 包装：TO252-3L（DPAK）
- 符合 RoHS，100% 保证雪崩能量耐量，并具备完整功能可靠性认证
二、应用场景
适用于：
- 同步降压（synchronous buck）转换器的高端或低端开关管
- 同步整流器、电源管理模块（PMIC）
- 电源分配、DC-DC 转换、马达驱动和开关电源中低压大电流场合
三、设计与使用要点
- 栅极驱动：为达到标称 RDS(on)=13mΩ，建议 Vgs 驱动电压为 10V；若仅以 5V 驱动，器件未必完全增强，需评估导通损耗。
- 开关损耗与驱动能力：Qg=15nC，结合 Ciss/Crss，在高频开关时对驱动器能力与驱动电流有一定要求，适当选择驱动电流及栅极电阻以平衡开关速度与 EMI。
- 热管理：Pd=11.5W 为理想条件下耗散能力，实际应用中需依赖 PCB 铜箔面积与散热设计（短路径、厚铜、尽量靠近散热孔），必要时使用散热片或加强底板导热。
- 布局建议：最小化电流回路面积以降低环路电感，栅极、源极走线尽量短且使用宽铜，低侧 MOSFET 源极应注意感测和电流取样布局。
四、可靠性与合规
器件通过严格功能可靠性认证，100% 保证雪崩能量耐量，并满足 RoHS 与绿色产品要求，适合对可靠性有较高要求的工业与消费类电源设计。
XR30N03 在 30V/30A 级别中提供了良好的导通性能与开关平衡，是同步降压及中大电流开关场合的实用选择。设计时请根据实际电流、开关频率和散热条件，合理选型与 PCB 布局以发挥器件最佳性能。
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