WMSIC Electronic Components

XNRUSEMI XR120N03F

ModelXR120N03F
PackagePDFN5060-8L
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR120N03F
Type
XNRUSEMI
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR120N03F
Electronic Component
1
Package
PDFN5060-8L
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.177g
Electronic Component
1
Electronic Component
BM0264844056
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
62.5W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR120N03F 产品概述

一、主要性能亮点

XR120N03F 是一款高单元密度沟槽式 N 沟道 MOSFET,面向同步降压转换器及高频开关电源设计。器件额定漏源电压 Vdss = 30V,连续漏极电流 Id = 120A,导通电阻 RDS(on) 仅 5.5mΩ(Vgs = 4.5V),在保持低导通损耗的同时兼顾开关速度。栅极电荷 Qg = 28.8nC(@10V),输入电容 Ciss = 2.971nF,反向传输电容 Crss = 85pF,输出电容 Coss = 850pF,整体开关能耗与驱动需求处于良好平衡。

二、关键电气参数

  • 类型:N 沟道沟槽 MOSFET
  • 漏源电压:Vdss = 30V
  • 连续漏极电流:Id = 120A
  • 导通电阻:RDS(on) = 5.5mΩ @ Vgs = 4.5V
  • 阈值电压:Vgs(th) = 2.5V
  • 栅极电荷:Qg = 28.8nC @ 10V
  • 输入/输出/传输电容:Ciss = 2.971nF,Coss = 850pF,Crss = 85pF
  • 耗散功率:Pd = 62.5W
  • 工作温度范围:-55℃ ~ +175℃
  • 符合 RoHS 与绿色产品要求,保证 EAS,并具备完整功能可靠性认证

三、典型应用场景

  • 同步降压转换器(高侧/低侧)
  • 开关电源(SMPS)、点对点电源模块
  • 高效率电机驱动与伺服电路(短时大电流)
  • 电源管理、负载开关与逆变前端

四、封装与热管理

XR120N03F 采用 PDFN5060-8L 紧凑封装,适合高密度 PCB 布局。封装提供较低热阻,配合良好铜箔散热与底板过孔能够发挥 Pd = 62.5W 的热性能。在设计时应关注焊盘散热、底板铜量和过孔布局以降低结到环境的热阻,并根据实际散热条件进行额定电流与功耗的降额设计。

五、设计与使用建议

  • 栅极驱动:推荐 10V 驱动以降低 RDS(on),若驱动电压受限于 4.5V,其 RDS(on) 指标已给出,可用于低压驱动方案。
  • 开关优化:Qg 适中,开关损耗与驱动功耗平衡,适合高频(数百 kHz)同步整流与降压拓扑。使用适当的栅极电阻和驱动级可以抑制振铃并降低 EMI。
  • 布局要点:短且宽的漏-源电流回路,靠近器件的旁路电容,尽量减少寄生电感,保证热量能快速传导到 PCB。
  • 可靠性与保护:在高电流和脉冲负载条件下注意电流冲击和结温上升,必要时配合电流限流、软启动及温度监测电路。遵循器件厂商的焊接与回流曲线以保证封装可靠性。

六、总结

XR120N03F 以低导通阻、适中栅极电荷与紧凑封装为核心优势,适用于需要高效率、高功率密度的同步降压与电源管理应用。合理的热设计与驱动策略能最大化其性能,满足工业级温度与可靠性要求,是中低电压大电流开关场合的优选器件。品牌:XNRUSEMI(新锐),封装:PDFN5060-8L。

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