WMSIC Electronic Components

XNRUSEMI XR20N04D

ModelXR20N04D
PackagePDFN3333-8L
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR20N04D
Type
XNRUSEMI
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR20N04D
Electronic Component
1
Package
PDFN3333-8L
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.1g
Electronic Component
1
Electronic Component
BM0264844093
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
12.5W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
40V
Capacitor(Ciss)
850pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR20N04D 产品概述

XR20N04D 是 XNRUSEMI(新锐)推出的一款高单元密度沟槽式 N 沟道 MOSFET,针对中低功率开关和负载开关应用进行了优化。器件在 40V 漏源耐压下,提供了较低的导通电阻和适中的开关特性,适用于汽车电子外围电路、消费电子电源、DC-DC 变换器及功率路径管理等场景。器件符合 RoHS 和绿色环保要求,并已通过全面功能可靠性认证,工作温度范围宽(-55℃ ~ +150℃),适配多种工况。

一 主要参数

  • 元件类型:N 沟道 MOSFET(沟槽式,高单元密度)
  • 数量:1 个 N 沟道
  • 漏源电压 Vdss:40 V
  • 连续漏极电流 Id:20 A
  • 导通电阻 RDS(on):13.4 mΩ @ Vgs = 10 V
  • 最大耗散功率 Pd:12.5 W(依散热条件而定)
  • 总栅极电荷 Qg:12 nC @ 20 V
  • 输入电容 Ciss:850 pF
  • 反向传输电容 Crss:69 pF
  • 工作温度范围:-55℃ ~ +150℃
  • 封装:PDFN3333-8L
  • 品牌:XNRUSEMI(新锐)
  • 环保/认证:RoHS、绿色产品;具备全面功能可靠性认证

二 产品特点与优势

  • 低导通电阻 —— 在 Vgs = 10 V 条件下 RDS(on) 仅 13.4 mΩ,导通损耗小,适合持续电流较高的场合,提升效率并降低发热。
  • 中等开关性能 —— Qg = 12 nC(@20 V)和 Ciss = 850 pF,使得器件在开关频率中等(如几十 kHz ~ 数百 kHz)时兼顾开关损耗与驱动需求。
  • 40V 耐压 —— 可用于 12V/24V 系统及更高安全裕度的电源拓扑,适配汽车辅助、工业和消费类电源的典型电压等级。
  • 紧凑封装 —— PDFN3333-8L 提供较好的热性能与 PCB 布局友好性,便于在空间受限的电路中实现高功率密度。
  • 宽温特性与可靠性 —— -55℃~+150℃ 工作范围以及通过的可靠性认证,利于苛刻环境下长期稳定工作。

三 推荐应用

  • DC-DC 降压/升压转换器功率开关
  • 同步整流器与负载开关(电源管理)
  • 电池保护电路与功率路径切换
  • 车载 12V/24V 辅助电源(非主要驱动三相电机的高功率场合)
  • 刷新率较低或中等频率的电源转换与开关应用

四 设计与布局注意事项

  • 驱动电压:建议采用 10 V 级栅极驱动以发挥标称 RDS(on) 性能。若仅能提供 4.5 V 驱动,需要在数据表中核实低 Vgs 下的 RDS(on) 特性。
  • 栅极驱动器选型:Qg = 12 nC 表明中等驱动能量需求。计算平均栅极电流可用 Ig_avg = Qg × fswitch,例如在 100 kHz 下 Ig_avg ≈ 1.2 mA。峰值电流由驱动器电流能力及外加栅阻决定,通常建议并联小电阻(5–20 Ω)抑制振铃与控制开关速度。
  • 开关损耗与 Miller 效应:Crss = 69 pF 表示在受高 dV/dt 情况下容易出现 Miller 电容耦合,注意布局避免费环路过大,必要时加入缓冲或 RC 抑制网络。
  • PCB 散热:器件 Pd 为 12.5 W(在特定热阻条件下),实际可承受的持续电流受 PCB 铜箔面积、散热层与焊盘设计影响。建议在器件金属底/散热焊盘下方开多通孔并增加散热铜箔面积以降低结壳温升。
  • 布局建议:将驱动、源、漏的功率回路尽量短且宽;将敏感信号回流路径与功率回路分离;使用 Kelvin 源引脚(若封装支持)可提高测量与驱动精度。

五 热管理与可靠性

  • 在实际设计中不要仅依赖器件额定 Id 值,需结合 PCB 热阻(RθJA)、工作环境温度和占空比计算结温。长时间在大电流下工作时,适当保守设计并验证结温 ≤ 125℃(或按器件数据表规定)。
  • 宽温范围和通过的可靠性认证使该器件适用于高/低温及振动等恶劣环境,但对于冲击性大电流脉冲或高应力的反向恢复能量,建议查阅完整数据手册中的 SOA 与脉冲额定、能量吸收(avalanche)参数。

六 选型建议与配套

  • 若目标应用为 12V/24V 电源开关、同步整流或负载切换,XR20N04D 在导通损耗与开关能耗之间提供了良好平衡,是优先考虑的器件之一。
  • 对于高频(> several 100 kHz)或需要极低导通损耗的场合,可比较同系列中更低 RDS(on) 或更低 Qg 的型号以做权衡。
  • 选型时同时关注完整数据手册中 RθJA/RθJC、脉冲额定以及 SOA 曲线,结合 PCB 版图与外部散热策略完成热设计。

总结:XR20N04D 是一款面向中低功率、高密度布局场景的 40V N 沟道 MOSFET,具有较低导通电阻、适中的栅极电荷与良好封装散热表现,适合常见的电源管理与负载开关应用。实际使用时请结合完整数据手册做热设计与开关驱动匹配,以获得最佳可靠性与效率。

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