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XNRUSEMI XR8810B
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR8810B
- Type
- XNRUSEMI
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR8810B
- Electronic Component
- 1
- Package
- TSSOP-8
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.073g
- Electronic Component
- 1
- Electronic Component
- BM0264896363
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 830mW
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR8810B 产品概述
一、产品简介
XR8810B 是 XNRUSEMI（新锐）推出的一款双通道低 RDS(on) 沟槽式 N 沟道 MOSFET，封装为 TSSOP-8。器件对锂离子电池组应用进行了专门优化，具备强大的 ESD 保护能力，符合 RoHS 与绿色产品要求，并通过了全功能可靠性认证，适合电池保护、功率开关和电源管理场景。
二、主要特性
- 双通道 N 沟道设计（数量：2 个 N 沟道），节省 PCB 空间，便于做充放电对管或同步开关。
- 低导通电阻：RDS(on) = 21 mΩ @ Vgs=2.5V，13.5 mΩ @ Vgs=4.5V，适合低压大电流场合。
- 额定参数：Vdss = 20V，连续漏极电流 Id = 7A（器件级别），耗散功率 Pd = 830 mW。
- 栅极特性：Vgs(th) ≈ 0.7V（典型），总栅极电荷 Qg = 8 nC @ 4.5V，便于低电压驱动。
- 寄生电容：Ciss = 545 pF，Coss = 103 pF，Crss = 90 pF，利于高频开关设计与估算开关损耗。
- 工作温度范围：-55 ℃ ~ +150 ℃。
三、典型应用
- 锂离子电池组保护板（充放电 MOS 管对）
- 电源路径管理与负载开关
- 同步整流与降压转换器低侧/高侧开关（在低压系统）
- 移动设备与便携式电源的功率控制模块
四、热管理与可靠性
TSSOP-8 封装适合空间受限的便携设备，但热耗散能力有限（Pd = 830 mW），在高电流或连续功耗场景需注意 PCB 散热设计。XR8810B 已通过全功能可靠性认证，适合工业和消费级长期使用。
五、设计和布局建议
- 对于高电流应用，尽量增大铜箔宽度、缩短漏源回流路径并使用多层接地层来降低热阻与寄生电感。
- 栅极驱动：推荐 4.5V 驱动以获得更低 RDS(on)，Qg=8 nC 要求驱动器具备足够瞬态电流能力以控制开关损耗。
- 在开关节点并联适量的去耦电容和输入旁路，以降低 Crss 引起的电压回升和 EMI。
- 利用器件的 ESD 抗扰性简化外围保护，但仍建议对关键端口（例如外部接口）加以保护设计以满足系统等级要求。
六、选型要点
当系统电压不超过 20V、需要双 MOSFET 集成以节省空间且期望低门限驱动时，XR8810B 是优选。若预期长时间大电流（接近 7A）工作，应评估 PCB 热设计并考虑并联或选择更高 Pd 的封装。
总结：XR8810B 以其低 RDS(on)、低门限和良好 ESD 性能，适用于以锂电池为主的便携和电源管理场景，兼顾体积与效率，是电池保护与低压功率开关的实用选择。
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