WMSIC Electronic Components

XNRUSEMI XR2302V

ModelXR2302V
PackageSOT-23
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR2302V
Type
XNRUSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR2302V
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0264844108
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
850mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR2302V 产品概述

一、概述

XR2302V 是 XNRUSEMI(新锐)推出的一款高单元密度沟槽式 N 沟道 MOSFET,采用 SOT-23 小封装,面向小功率开关与负载开关场景。器件在 20V 漏源耐压下提供优秀的开通性能与开关效率,满足便携、电源管理与电机驱动等应用的紧凑化设计需求。产品符合 RoHS 与绿色环保要求,并通过了全功能可靠性认证,适合量产应用。

二、主要参数

  • 类型:N 沟道沟槽 MOSFET
  • 漏源电压 Vdss:20 V
  • 连续漏极电流 Id:3 A
  • 导通电阻 RDS(on):55 mΩ @ Vgs = 4.5 V
  • 功耗 Pd:850 mW
  • 阈值电压 Vgs(th):1.0 V
  • 总栅极电荷 Qg:2.7 nC @ Vgs = 10 V
  • 输入电容 Ciss:184 pF
  • 反向传输电容 Crss:28 pF
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 包装:SOT-23

三、主要特性

  • 低导通电阻:55 mΩ@4.5V 在 SOT-23 封装下能提供较低导通损耗,适合 5V 逻辑驱动。
  • 快速开关:较小的 Ciss(184 pF)与 Crss(28 pF)以及 Qg 仅 2.7 nC(10V)有利于降低开关损耗并支持较快的开关频率。
  • 小型封装:SOT-23 便于表面贴装,适合空间受限的板级设计。
  • 宽工作温度与可靠性认证:适合工业级和消费类多种工作环境。

四、典型应用

  • 便携式设备电源管理、负载开关与电池保护
  • 5V 逻辑控制的低压 DC-DC 转换器开关器件
  • 小功率电机驱动与继电器替代开关
  • 信号切换、保护电路及通用开关应用

五、使用建议

  • 驱动电压:在 4.5V 门极驱动下可达到标称 RDS(on),建议与 5V 或更高驱动电平配合以保证最低损耗;若仅用 3.3V 驱动,应评估导通损耗增加带来的热升。
  • 散热管理:SOT-23 封装 Pd = 850 mW,实际允许功耗受 PCB 铜箔面积与环境温度影响较大。高电流或连续导通场景建议在 PCB 上增加散热铜箔并靠近过孔散热。
  • 布局要点:门极至驱动源的回流路径应尽量短,输入端加入去耦电容以抑制开关尖峰。
  • 保护与可靠性:在感性负载应用中建议并联减速网络或 TVS 以抑制瞬态电压,避免超出 20V Vdss。

六、型号与合规

  • 型号:XR2302V
  • 品牌:XNRUSEMI(新锐)
  • 封装:SOT-23
  • 合规:RoHS、绿色产品,并已通过全功能可靠性认证

如需封装图、引脚分配、完整尺寸或更详细的电气特性曲线(RDS(on) 随温度、Id 与 Vgs 的变化、开关能耗测试等),可提供数据手册或样片以便进一步验证设计。

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