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XNRUSEMI XR9928
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR9928
- Type
- XNRUSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR9928
- Electronic Component
- 1
- Package
- SOP8
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.173g
- Electronic Component
- 1
- Electronic Component
- BM0264844079
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2.25W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR9928 产品概述
XR9928 是新锐（XNRUSEMI）推出的一款双通道 N 沟道场效应管，采用先进沟槽（trench）工艺和优化器件结构，兼顾低导通损耗与开关性能，适用于中低压高效率电源及开关应用。
一、主要参数概览
- 通道数量：2 个 N 沟道（双 MOSFET）
- 漏源电压 Vdss：20 V
- 连续漏极电流 Id：8 A
- 导通电阻 RDS(on)：57 mΩ @ Vgs = 1.8 V
- 耗散功率 Pd：2.25 W（SOP8 封装）
- 阈值电压 Vgs(th)：1.0 V
- 总栅极电荷 Qg：60 nC @ Vgs = 4.5 V
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装形式：SOP8
二、器件优势要点
- 低 RDS(on)（在 1.8 V 驱动下已可获得 57 mΩ）适合低电压逻辑驱动，大幅降低导通损耗；
- 沟槽工艺与封装热设计使器件在小封装下仍能提供较好的导热性能和功率处理能力；
- 中等栅极电荷（60 nC @4.5 V）在保证开关速度的同时，控制驱动能耗，适配常见驱动器件。
三、典型应用场景
- 同步整流与降压转换器（DC-DC）用于提升转换效率；
- 电源分配开关与负载开/关控制，适合 20 V 以内系统；
- 电池保护与电源管理模块；
- 小功率马达驱动及通用功率开关场合（需注意电压余量）。
四、设计与使用建议
- 推荐在 1.8 V~4.5 V 逻辑电平驱动下使用：1.8 V 可满足低损耗导通，4.5 V 驱动可提高开关性能；
- PCB 布局应优化散热：加大器件引脚与散热铜箔连接，必要时使用过孔与散热基板以降低结壳温升；
- 考虑栅极驱动能量：门极驱动功耗可按 Pg ≈ Qg×Vdrive×f 估算，选择合适驱动器和驱动频率以平衡效率与热耗；
- 并联使用时注意电流均分与热均衡，避免单颗器件超温。
五、封装与可靠性
SOP8 紧凑封装适合空间受限的应用，器件工作温度覆盖工业级范围（-55℃ 至 +150℃），适合要求较高环境稳定性的场合。为保证长期可靠性，建议在额定功耗范围内工作并留有散热裕度。
六、总结
XR9928 集成双路 N 沟道 MOSFET，凭借低导通电阻、合理的栅极电荷和工业级温度范围，在中低压高效率电源、负载开关及电源管理模块中具有良好性价比。采用合理的驱动与散热设计，可在多种应用中发挥稳定、低损耗的性能。
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