WMSIC Electronic Components

XNRUSEMI XR80N03BF

ModelXR80N03BF
PackagePDFN5060-8L
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR80N03BF
Type
XNRUSEMI
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR80N03BF
Electronic Component
1
Package
PDFN5060-8L
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.177g
Electronic Component
1
Electronic Component
BM0264844128
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
46W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V
Capacitor(Ciss)
2.088nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR80N03BF 产品概述

一、产品简介

XR80N03BF 是 XNRUSEMI(新锐)推出的一款高单元密度沟槽式 N 沟道功率 MOSFET,面向同步降压转换器等高效开关电源应用。器件在导通电阻与栅极电荷之间实现了良好平衡,兼顾低 conduction loss 与可接受的开关损耗,且符合 RoHS 及绿色产品要求,100% 保证 EAS 并提供完整功能可靠性验证。

二、主要参数

  • 器件类型:N 沟道 MOSFET(单片,1 个)
  • 漏源电压 Vdss:30 V
  • 连续漏极电流 Id:80 A
  • 导通电阻 RDS(on):3.2 mΩ @ Vgs = 10 V
  • 最大耗散功率 Pd:46 W
  • 阈值电压 Vgs(th):1.6 V
  • 总栅极电荷 Qg:20 nC @ Vgs = 15 V
  • 输入电容 Ciss:2.088 nF
  • 反向传输电容 Crss:209 pF
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:PDFN5060-8L
  • 品牌:XNRUSEMI(新锐)

三、特性与优势

  • 低 RDS(on):3.2 mΩ(10 V 驱动)显著降低导通损耗,适合高电流路径;
  • 合理的栅极电荷(20 nC)在高开关频率下能兼顾驱动功耗与开关速度;
  • 较小的 Crss 有助于降低开关过程中电压耦合与开关损耗;
  • 宽温度范围与高功率耗散能力,适用于工业级与通信电源环境;
  • 小型 PDFN5060-8L 封装利于高密度板级布局,满足紧凑电源设计需求。

四、典型应用

  • 同步降压转换器(主开关或同步整流)
  • 便携式与边缘计算电源管理
  • 电机驱动低侧开关(在 30 V 级别)
  • 通信与工业电源模块

五、封装与热管理建议

PDFN5060-8L 提供较大的散热通道,焊盘与底部散热垫必须与 PCB 大面积铜箔和多层散热过孔连接,以降低结到环境热阻。器件在高电流工作下建议采用短而宽的 PCB 走线以减小寄生电感与导体损耗,并根据应用场景进行热阻与温升计算,必要时采用风冷或强制对流散热。

六、设计注意事项

  • 驱动电压建议基于数据参数在 10 V 级别,以达到标称 RDS(on);若采用低压门驱动需评估 RDS(on) 上升对损耗的影响;
  • 在高频开关应用中关注 Qg 与驱动能力匹配,避免驱动器过载或过慢致使开关损耗增加;
  • 布局上优先保证源极回流路径最短,以减少寄生电感和噪声;栅极走线应远离快速变化节点并加阻尼或 RC 抑制以防振铃;
  • 在并联使用时确保电流均分,注意器件热特性与 PCB 散热一致性。

七、可靠性与合规

器件符合 RoHS 与绿色产品要求,并承诺 100% EAS(静电放电敏感性)保证和完整功能可靠性测试,适合要求可靠性与一致性的工业与商用电子产品设计。若需样片或完整规格书,可向 XNRUSEMI(新锐)或授权分销渠道索取。

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