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XNRUSEMI XR3404AL
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR3404AL
- Type
- XNRUSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR3404AL
- Electronic Component
- 1
- Package
- SOT23-3L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0264844115
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.6W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR3404AL 产品概述
一、主要特性
XR3404AL 是 XNRUSEMI（新锐）推出的一款高细胞密度沟槽式 N 沟道 MOSFET，面向小功率开关与负载开关应用。器件主要参数包括：Vdss = 30V、连续漏极电流 Id = 6A、典型导通电阻 RDS(on) = 25mΩ（VGS = 10V）、耗散功率 Pd = 1.6W、栅阈电压 VGS(th) = 2.5V、总栅电荷 Qg = 5.2nC（VGS = 10V）。封装为 SOT23-3L，符合 RoHS 及绿色产品要求，并通过了全功能可靠性认证。
二、电气与热参数要点
- 低导通电阻（25mΩ @10V）在开关导通时能显著降低导通损耗，提高效率。
- Vdss 30V 适合多数 12V/24V 较低电压系统的开关场合。
- Pd = 1.6W（SOT23 小封装）提示在高电流或大占空比下需关注散热与 PCB 散热设计。
- 工作温度范围宽（-55℃ ～ +150℃），适用于较严苛的环境条件。
三、驱动与开关性能
- Qg = 5.2nC（10V）表示栅极电荷量处于中等水平，适配常见驱动器，但对快速开关或高频驱动时需考虑驱动器能力与驱动功耗。
- VGS(th) ≈ 2.5V 意味着在低电压逻辑驱动下（如 3.3V）导通性能会有所下降，若要求最低 RDS(on)，建议采用 10V 驱动或确认 5V 驱动下的导通损耗是否满足系统需求。
四、封装与可靠性
- SOT23-3L 封装体积小、适合空间受限的便携式与消费电子产品。
- 由于封装体积限制，热阻较大，PCB铜箔面积与过孔散热设计对长期可靠性和热稳定性至关重要。
- 通过全功能可靠性认证，满足工业级应用的可靠性要求。
五、典型应用场景
- 电源管理：负载开关、反向电流保护、功率路径选择。
- 开关电路：低功耗 DC-DC 后级、功率控制开关。
- 消费类与工业设备：便携式设备、传感节点、通信模块等需要小封装高效率开关的场合。
六、使用建议与注意事项
- 若系统为 3.3V 或 5V 驱动，应在原型阶段评估 RDS(on) 与温升；对最低导通损耗有较高要求时建议使用 10V 驱动或选型更低 RDS(on) 的器件。
- 设计 PCB 时扩大铜箔面积并采用热过孔，以改善散热能力，避免长期在 Pd 极限附近工作。
- 在高频开关应用中，考虑 Qg 对驱动器的瞬态电流需求，适当选择驱动器或加入栅极阻尼以抑制振铃。
XR3404AL 以小体积、较低的导通电阻和可靠性认证，适合多数小功率开关与负载开关应用，建议结合具体驱动电压与热设计进行系统级评估。
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