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XNRUSEMI XR60N02D
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR60N02D
- Type
- XNRUSEMI
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR60N02D
- Electronic Component
- 1
- Package
- PDFN3333-8L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.05g
- Electronic Component
- 1
- Electronic Component
- BM0264844136
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 15W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR60N02D 产品概述
一、产品简介
XR60N02D 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道 MOSFET，面向同步降压转换器和高效率开关电源应用。器件在低导通电阻与合适栅极电荷之间取得平衡，既支持较小的导通损耗，又兼顾驱动能耗，适合对效率和热性能有较高要求的中低压系统。
二、主要参数
- 类型：N 沟道 MOSFET（单元数：1）
- 漏源电压 Vdss：20 V
- 连续漏极电流 Id：60 A
- 导通电阻 RDS(on)：4 mΩ @ Vgs = 4.5 V
- 耗散功率 Pd：15 W
- 阈值电压 Vgs(th)：0.7 V（典型）
- 总栅极电荷 Qg：32 nC @ 10 V
- 输入电容 Ciss：2.5 nF
- 输出电容 Coss：407 pF
- 反向传输电容 Crss：386 pF
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：PDFN3333-8L
- 可靠性与合规：符合 RoHS，100% 保证雪崩能量（EAS），通过全功能可靠性认证
三、性能亮点
- 低 RDS(on)：4 mΩ（4.5 V 门极驱动）在降低导通损耗方面表现优秀，适合高电流路径使用。
- 合理的栅极电荷：Qg=32 nC（10 V）在驱动功耗与开关速度间取得均衡，适合常见的场效驱动方案。
- 全温度范围与高可靠性：-55 ℃ 至 150 ℃ 的工作范围和 100% 雪崩耐量保证，提升系统容错能力与长期可靠性。
- 小型 PDFN3333-8L 封装，便于高密度布板与热管理设计。
四、典型应用场景
- 同步降压（buck）转换器的高侧/低侧开关管
- 服务器、通信与消费类电源模块的主开关器件
- 高效率直流电源、负载开关与功率管理模块
五、封装与散热建议
PDFN3333-8L 封装在空间受限的高密度板上表现良好。建议：
- 在 PCB 上设计尽量宽的铜箔散热区并与散热垫充分焊接，降低热阻。
- 在高电流路径使用多层过孔连接散热层，确保器件在 60 A 等级工作时热稳定。
- 对于开关频率较高的应用，注意 Coss/Crss 对开关损耗和电压回升的影响，适当增加阻尼或选择合理的驱动斜率。
六、选型与使用建议
- 若系统采用低电压高速切换（如 4.5 V 驱动），XR60N02D 可提供低导通损耗；若驱动电压为 10–12 V，应评估 Qg 带来的驱动功耗。
- 在并联使用时注意匹配热阻与分流设计，以避免不均流。
- 关注电路中的 dv/dt 及回灌路径，必要时配合 RC 缓冲或驱动优化以降低开关应力。
XR60N02D 以其低 RDS(on)、合适的栅极电荷和良好的可靠性特性，适合需要兼顾效率、热管理与可靠性的同步降压和功率管理场景。若需更详细的电气特性曲线、封装机械图或应用参考设计，可提供进一步资料。
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