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XNRUSEMI XR8N04Q
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR8N04Q
- Type
- XNRUSEMI
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR8N04Q
- Electronic Component
- 1
- Package
- SOT89-3L
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.138g
- Electronic Component
- 1
- Electronic Component
- BM0264844074
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Voltage(Vdss)
- 40V
- Capacitor(Ciss)
- 633pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR8N04Q N沟道MOSFET产品概述
XR8N04Q是新锐半导体（XNRUSEMI）推出的一款N沟道增强型MOSFET，以小封装、低损耗、宽温适应为核心特点，适配中小功率、空间紧凑的电子设计场景。以下是产品详细概述：
一、产品基本识别
XR8N04Q为单只N沟道功率MOSFET，品牌为新锐半导体（XNRUSEMI），采用SOT-89-3L贴片封装（3引脚），是针对便携设备、小型电源等场景优化的小体积器件。
二、核心电气参数亮点
该产品平衡了功率能力与损耗控制，关键参数及实际意义如下：
- 耐压与电流能力：漏源击穿电压Vdss=40V，连续漏极电流Id=8A，覆盖多数低压（≤40V）中小功率应用的电压电流需求；
- 低导通损耗：栅压10V、漏极电流8A时，导通电阻RDS(on)=19mΩ——以8A电流计算，导通损耗仅约1.2W（远低于2W的最大耗散功率），能有效提升电路效率；
- 开关特性：栅极电荷量Qg=12nC（Vgs=20V时），输入电容Ciss=633pF、反向传输电容Crss=58pF，低Qg设计降低驱动损耗，适配100kHz以下高频开关应用；
- 易驱动与宽温适应：阈值电压Vgs(th)=1.5V（典型值），兼容3.3V、5V等常见控制电压；工作温度范围-55℃~+150℃，适配工业级、车载低温等严苛场景；
- 功率耗散：封装下最大耗散功率Pd=2W，结合低导通电阻，无需额外散热片即可满足多数应用的散热需求。
三、封装与散热特性
XR8N04Q采用SOT-89-3L封装，尺寸小巧（约3mm×2.5mm×1.5mm），适配手机、平板等空间受限的设计。该封装通过优化引脚布局与散热焊盘，能将工作热量有效传导至PCB；配合低导通损耗，连续8A电流下结温仍保持在安全范围，无需额外散热措施。
四、典型应用场景
基于参数特点，XR8N04Q主要适用于以下场景：
- 便携电子：手机电池保护、USB PD负载开关——小封装适配主板布局，低损耗延长续航；
- 小型电源：5V/2A、12V/1A低压电源的开关管，低Qg提升开关效率；
- 小型电机驱动：玩具电机、手持风扇等直流电机驱动，8A电流满足启动与运行需求；
- 工业控制：-55℃~+150℃宽温适配工业现场，用于传感器调理、小功率继电器驱动；
- 车载辅助电路：车载USB充电、后视镜调节等低压电路，低温适应北方冬季环境。
五、品牌与可靠性保障
新锐半导体（XNRUSEMI）的XR8N04Q通过RoHS无铅认证，批量产品参数一致性好，降低电路调试难度。宽温范围与稳定阈值电压设计，确保长期使用可靠性，适合量产项目。
六、产品优势总结
XR8N04Q核心优势为：小封装省空间、低损耗提效率、宽温适应强、易驱动成本低，是低压中小功率场景中性价比突出的MOSFET选择。
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