WMSIC Electronic Components

XNRUSEMI XR2300A

ModelXR2300A
PackageSOT-23
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 23+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR2300A
Type
XNRUSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR2300A
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.036g
Electronic Component
1
Electronic Component
BM0264844110
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR2300A 产品概述

一、产品简介

XR2300A 是 XNRUSEMI(新锐)推出的一款高单元密度沟槽式 N 沟道 MOSFET,专为小功率开关和负载开关场景设计。器件额定漏源电压 20V,连续漏极电流 6A,兼顾低导通损耗与小封装解决方案,适用于空间受限但需要较好效率的电源与开关电路。

二、主要性能参数

  • 类型:N 沟道 MOSFET
  • Vdss(漏源耐压):20V
  • Id(连续漏极电流):6A
  • RDS(on)(导通电阻):60mΩ @ Vgs=2.5V
  • Vgs(th)(阈值电压):1.2V
  • Pd(耗散功率):1W
  • Qg(总栅极电荷):4.6nC @ Vgs=4.5V
  • Ciss(输入电容):310pF;Coss(输出电容):310pF;Crss(反向传输电容):49pF
  • 工作温度范围:-55°C ~ +150°C
  • 封装:SOT-23
  • 认证:RoHS、绿色产品,并通过全功能可靠性认证

三、应用场景

适用于便携式设备电源开关、负载开关、转换器低压侧开关、通用开关管、背光驱动与电池管理系统等需要在有限封装内实现低导通损耗的场合。

四、封装与热管理

SOT-23 体积小巧,适合高密度 PCB 布局。器件额定耗散功率为 1W,实际应用中需注意 PCB 散热设计:加大铜箔面积、合理走热通道或采用过孔下沉热量,以避免长期高温导致性能退化。

五、设计与选型建议

  • 若驱动电压可达 2.5V,可获得标称 RDS(on) 性能;若栅极驱动受限,需关注导通电阻上升带来的功耗。
  • 栅极电荷 Qg 适中,开关速度与驱动功耗之间平衡良好;驱动器应能提供峰值电流以缩短开关时间,减小过渡损耗。
  • 在超过 6A 或对导通损耗要求更高的场合,可考虑并联或选择更低 RDS(on) 器件。

六、可靠性与合规

XR2300A 满足 RoHS 与绿色产品要求,并通过了全面的可靠性认证,适合工业级与消费类产品长期可靠使用。总体而言,该器件在小功率开关应用中提供了性能与成本的平衡,是替换传统更大封装 MOSFET 的优选。

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