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XNRUSEMI XR150N04FT
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR150N04FT
- Type
- XNRUSEMI
- Minimum package
- 50 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR150N04FT
- Electronic Component
- 1
- Package
- TO-220F
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 1g
- Electronic Component
- 1
- Electronic Component
- BM0264896676
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 115W
- Electronic Component
- Electronic Component
- Electronic Component
- 50
- Voltage(Vdss)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR150N04FT 产品概述
一、产品简介
XR150N04FT 是 XNRUSEMI（新锐）推出的一款高性能互补 N 沟道 MOSFET，封装为 TO-220F。器件具有高单元密度和较低的导通电阻，面向同步降压转换器及高效率功率开关应用。产品符合 RoHS 及绿色环保要求，且 100% 通过 EAS 认证，保证功能可靠性。
二、主要参数
- 类型：N 沟道 MOSFET
- 漏源电压 Vdss：40 V
- 连续漏极电流 Id：150 A
- 导通电阻 RDS(on)：3.1 mΩ @ Vgs = 10 V
- 阈值电压 Vgs(th)：2.5 V
- 栅极总电荷 Qg：112 nC @ Vgs = 10 V
- 输入电容 Ciss：6.46 nF；输出电容 Coss：455 pF；反向传输电容 Crss：276 pF
- 耗散功率 Pd：115 W（受散热条件影响）
- 工作温度：-55℃ ～ +150℃
- 封装：TO-220F
三、关键特性与优势
- 低 RDS(on)（3.1 mΩ@10V）在高电流低压差场景下可显著降低导通损耗。
- 较大的 Id（150 A）和高 Pd（115 W）使器件适合高功率密度设计，前提是良好散热。
- 较高的栅极电荷（112 nC）与较大 Ciss，意味着开关时需更强的栅极驱动能力以控制开关损耗与开关速度。
四、典型应用场景
- 同步降压（Buck）转换器主开关与同步整流
- 服务器与通信电源、点对点电源模块
- 电机驱动、功率开关、逆变器与电源管理模块
五、封装与可靠性
TO-220F 绝缘封装便于直接安装在散热片上或通过母板散热，适合需要良好热管理的应用。器件在工业级温度范围内可靠工作，并满足绿色环保与功能可靠性认证。
六、使用建议与注意事项
- 为发挥最低 RDS(on)，建议采用 Vgs = 10 V 的栅极驱动；若仅有 5 V 驱动，应评估导通损耗上升。
- 由于 Qg 与 Ciss 较大，驱动器需具备足够峰值电流；可并联栅极驱动或使用低阻抗驱动器，并考虑串联栅极电阻以抑制振铃。
- 设计时应重视散热路径与封装热阻，合理布局电源回路以降低寄生电感，必要时采用寄生感抗吸收或缓冲网络以减小开关过冲与电磁干扰。
如需器件封装图、典型等效电路或在特定拓扑下的效率与损耗估算，可提供进一步设计支持与仿真建议。
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