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XNRUSEMI XR4886S
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR4886S
- Type
- XNRUSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR4886S
- Electronic Component
- 1
- Package
- SOP-8
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.11g
- Electronic Component
- 1
- Electronic Component
- BM0264974442
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 5W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR4886S 产品概述
XR4886S 是 XNRUSEMI（新锐）推出的一款高性能沟槽式双通道 N 沟道 MOSFET，封装为 SOP-8。器件以极高的单元密度设计，针对同步降压转换器及开关电源等应用提供优异的导通特性与栅极驱动特性，满足工业级温度与可靠性要求。
一、主要特性
- 双 N 沟道器件，封装紧凑（SOP-8），便于 PCB 布局与并联使用。
- 低导通电阻：RDS(on) = 88 mΩ（VGS = 10V），在功率开关场合可有效降低导通损耗。
- 适用于中高压开关：漏源耐压 VDSS = 100V。
- 栅极电荷较小：总栅极电荷 Qg = 12 nC（标称 50V 条件），有利于降低驱动能耗与开关损耗。
- 完整功能可靠性和 100% 雪崩能量保证，符合 RoHS 与绿色产品要求。
二、主要参数
- 数量：2 个 N 沟道
- 漏源电压 VDSS：100 V
- 连续漏极电流 ID：8 A
- 导通电阻 RDS(on)：88 mΩ @ VGS = 10 V
- 功耗 Pd：5 W（封装热限）
- 阈值电压 VGS(th)：1.5 V
- 总栅极电荷 Qg：12 nC @ 50 V
- 输入电容 Ciss：610 pF；输出电容 Coss：40 pF；反向传输电容 Crss：25 pF
- 工作结温：-55 ℃ ~ +150 ℃
- 封装：SOP-8
三、典型应用
- 同步降压转换器（主开或同步管）
- 通用开关电源（SMPS）
- 电机控制驱动与功率管理模块
- 中等功率直流-直流变换器与分流保护电路
四、电路与 PCB 布局建议
- 高电流路径（源、漏）走铜厚且短，减小寄生电感与压降。
- 栅极驱动回路靠近器件布置，采用低阻抗回流路径并加阻尼/RC 抑振以减少开关振铃。
- 若并联使用，注意栅极驱动均流与热均衡，必要时在源端加入小电阻实现电流分享。
- 封装热阻限制下注意散热设计，必要时加大 PCB 散热铜箔或使用散热片。
五、可靠性与合规
XR4886S 符合 RoHS 要求，并对雪崩能量进行了 100% 保证，适用于要求较高可靠性的工业与消费类电源设计。常规使用中建议遵循器件最大额定值，参考典型应用电路进行验证以确保长期可靠性。
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