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XNRUSEMI XR6005L
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR6005L
- Type
- XNRUSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR6005L
- Electronic Component
- 1
- Package
- SOT23-3L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0264974399
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 3W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR6005L 产品概述
一、产品简介
XR6005L 是 XNRUSEMI（新锐）推出的一款高细胞密度沟槽式 N 沟道 MOSFET，封装为 SOT23-3L。该器件针对小功率开关与负载开关应用进行了优化，提供优秀的导通电阻与能效表现，满足 RoHS 与绿色环保要求并具备完整可靠性认证，适用于便携式电源、负载切换、DC-DC 旁路及电池管理等场景。
二、主要规格参数
- 类型：N 沟道 MOSFET（沟槽式，高细胞密度）
- 漏源电压 Vdss：60 V
- 连续漏极电流 Id：5 A
- 导通电阻 RDS(on)：49 mΩ @ Vgs = 10 V
- 阈值电压 Vgs(th)：2.5 V
- 栅极电荷量 Qg：14 nC @ Vgs = 10 V
- 输入电容 Ciss：825 pF
- 输出电容 Coss：49 pF
- 反向传输电容 Crss：41 pF
- 功耗 Pd：3 W
- 工作温度范围：-55 ℃ ~ +175 ℃
- 封装：SOT23-3L
- 品牌：XNRUSEMI（新锐）；RoHS / 绿色产品
三、关键性能与设计要点
- 低导通阻抗：在 10 V 栅压下 RDS(on) 仅 49 mΩ，适合在较高栅压下实现低导通损耗。按 I^2·R 计算，5 A 连续电流下导通损耗约 1.23 W，应与封装功耗和 PCB 散热一起评估。
- 开关能耗：Qg = 14 nC 意味着在高频开关时栅极驱动能耗不可忽视。驱动电流 Ig ≈ Qg·f_sw，建议根据开关频率选择合适驱动能力与驱动电阻以平衡开关损耗与电磁干扰。
- 结温与散热：SOT23-3L 的额定耗散功率 3 W（在标准测试条件下），实际应用需考虑 PCB 铜面积和通孔散热。建议在源极/漏极附近留出足够散热铜箔并使用多层板过孔增强热传导。
- 驻级与门极驱动：阈值 2.5 V 表明在 3.3 V 或更低逻辑电平下不能保证达到标称 RDS(on)，如需低电平驱动请验证器件在目标 Vgs 下的导通性能或使用升压栅极驱动器。
四、典型应用
- 低中功率 DC-DC 开关元件与同步整流
- 电池管理与电源路径开关（负载断开、热插拔）
- 便携设备电源切换与反向保护
- 小型电机驱动与继电器替代开关
五、布局与使用建议
- 栅极走线尽量短且加串联栅极电阻（10–100 Ω）以抑制振铃并控制开关速度。
- 在器件近旁放置去耦电容（如 10 µF 与 0.1 µF），减小开关瞬态电压摆幅。
- 增大源、漏的铜面积并采用多通孔以降低结至环境热阻。
- 评估实际工作温度与功率损耗，必要时做热仿真或测量结温以保证长期可靠性。
六、订购信息与验证
器件型号：XR6005L；封装：SOT23-3L；品牌：XNRUSEMI（新锐）。在设计定型前建议获取器件完整数据手册并进行实际电性测试（RDS(on) 随 Vgs 与温度变化、开关损耗与热特性验证），以确保满足具体系统要求。
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