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XNRUSEMI XR6003A
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR6003A
- Type
- XNRUSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR6003A
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0264974397
- Power Dissipation(Pd)
- 1.2W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 500pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR6003A 产品概述
一、产品简介
XR6003A 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道 MOSFET，额定漏源电压 60V，连续漏极电流 3A，封装为常见的 SOT-23，适合大多数小功率开关与负载开关场合。器件通过全功能可靠性认证，满足 RoHS 与绿色产品要求，适用于对体积、效率与成本有综合考量的设计。
二、主要参数与性能亮点
- Vdss：60V
- 连续漏极电流 Id：3A
- 导通电阻 RDS(on)：85mΩ（Vgs=10V）
- 阈值电压 Vgs(th)：2V（典型）
- 总栅极电荷 Qg：10nC（Vgs=10V）
- 输入电容 Ciss：500pF，反向传输电容 Crss：22pF，输出电容 Coss：28pF
- 最大耗散功率 Pd：1.2W（SOT-23）
性能要点：低 RDS(on) 提高导通效率；较小的 Coss/Crss 有利于降低开关损耗；Qg=10nC 意味着在中等开关频率下驱动损耗可控。
三、典型应用
- 低功耗 DC-DC 开关管与同步整流
- 负载开关、功率路径管理、反向阻断
- LED 驱动小功率开关
- 小型电机驱动、便携设备电源管理
四、选型与驱动建议
- 驱动电压：器件在 Vgs=10V 时 RDS(on) 指定为 85mΩ，若采用 5V 门驱动，导通电阻会显著上升，需在方案中验证导通损耗；Vgs(th)=2V 仅为导通阈值，不代表低电压下的低导通阻抗。
- 导通损耗示例：若在 3A 条件下工作，导通损耗约 I^2·R = 3^2×0.085 ≈ 0.765W，接近器件 Pd=1.2W，需要良好散热或降低平均电流/占空比。
- 开关损耗与驱动功耗：门极功率约 Pgate = Qg·Vdrive·f，例如 Qg=10nC、Vdrive=10V、f=100kHz 时 Pgate ≈ 0.01W，开关频率升高时需留意驱动能力与功耗。
- 推荐在门极串联小阻（典型 10–47Ω）用于抑制振铃并控制开关速率，必要时并联 TVS 或 RC 缓冲以保护 Crss 引起的峰值应力。
五、PCB 布局与散热建议
- SOT-23 封装散热能力有限，尽量使用较宽的铜箔与散热层将热量扩散到 PCB 大面积铜。
- 最小化漏极与源极走线的电感与电阻，紧凑布局以减少开关过冲和 EMI。
- 在电源侧靠近 MOSFET 放置充分的旁路电容，减小尖峰电压对器件的应力。
六、可靠性与合规
XR6003A 已通过器件级可靠性认证，符合 RoHS 与绿色产品标准。建议在最终产品验证中进行热循环、过流与长时间功耗老化测试，确保在目标应用工况下满足寿命与稳定性要求。
总结：XR6003A 以其 60V/3A 的电压电流等级、85mΩ 的低导通电阻与适中的栅极电荷，适合多数小功率开关和负载开关场合。设计时重点关注门驱动电压、平均电流下的导通损耗及 PCB 热管理，以发挥器件的最佳性能。
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