WMSIC Electronic Components

XNRUSEMI XR4884B

ModelXR4884B
PackageSOP8
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR4884B
Type
XNRUSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR4884B
Electronic Component
1
Package
SOP8
Electronic Component
2 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.19g
Electronic Component
1
Electronic Component
BM0264974368
Power Dissipation(Pd)
12.5W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
40V
Capacitor(Ciss)
850pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR4884B 产品概述

一、产品概览

XR4884B 是 XNRUSEMI(新锐)推出的一款高单元密度沟槽式双 N 沟道 MOSFET,封装为 SOP8,适用于多数小功率开关与负载开关场合。器件在低导通电阻与良好开关性能之间取得平衡,便于在有限 PCB 面积内实现高效功率控制。

二、主要电气参数

  • 器件类型:双 N 沟道 MOSFET(SOP8)
  • 漏源电压 Vdss:40 V
  • 连续漏极电流 Id:20 A
  • 导通电阻 RDS(on):22.6 mΩ @ Vgs = 4.5 V
  • 耗散功率 Pd:12.5 W(封装级别)
  • 阈值电压 Vgs(th):2.0 V
  • 总栅极电荷 Qg:12 nC @ Vgs = 10 V
  • 输入电容 Ciss:850 pF
  • 输出电容 Coss:78 pF
  • 反向传输电容 Crss:69 pF

三、优势与设计要点

  • 低导通电阻:22.6 mΩ(4.5 V 驱动)在低压差与中大电流场合能显著降低导通损耗,适合负载开关与功率路径控制。
  • 双管封装:SOP8 内含两个 N 沟道 MOSFET,有利于节约 PCB 面积并简化多通道设计(请参考器件数据手册确认引脚与内部连接方式)。
  • 开关性能平衡:12 nC 的栅极电荷与中等 Ciss/Coss 值,使其在中等频率开关(如同步整流、升降压开关电源)中表现良好;高频应用需兼顾驱动能量与开关损耗。
  • 可靠性与合规:符合 RoHS 要求,并通过全功能可靠性认证,适合商用与工业类产品选型。

四、典型应用场景

  • 负载开关与电源管理(便携设备、背光驱动、系统电源分配)
  • 小功率 DC-DC 转换器(同步降压/升压应用)
  • 电池保护与电源路径选择
  • 电机驱动低压驱动级、继电器替代应用

五、封装与热管理建议

SOP8 封装提供良好的安装便利性,但封装尺寸限制了散热能力。考虑到 Pd = 12.5 W,在实际应用中应:

  • 估算器件在实际工作点的导通与开关损耗,并保证器件结温在可靠范围内;
  • 在 PCB 设计时增加铜箔面积、放置热沉或多层热通孔以降低结-到-环境热阻;
  • 对高频开关应用,注意栅极驱动回路布局以减少振铃与电磁干扰。

六、选型建议与注意事项

  • 若系统栅极驱动电压为 4.5 V,可直接受益于器件的低 RDS(on);若使用 10–12 V 驱动,开关速度更快,但需验证驱动器能提供相应 Qg。
  • 在并联使用或作为多通道方案时,需关注器件一致性、热均衡与 PCB 布局。
  • 选型时请参考完整数据手册确认最大额定值(Vgs 最大值、脉冲电流、结温范围等)及引脚定义。

七、结论

XR4884B 以其低 RDS(on)、适中的栅极电荷和双通道 SOP8 封装,为小功率开关和负载开关应用提供了高性价比的解决方案。通过合理的驱动与热设计,可在各类消费与工业产品中实现可靠、高效的功率控制。若需原理图建议、布局示例或更多电气曲线,请提供进一步需求。

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