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XNRUSEMI XR50N10L2
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR50N10L2
- Type
- XNRUSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR50N10L2
- Electronic Component
- 1
- Package
- TO252-3L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 1g
- Electronic Component
- 1
- Electronic Component
- BM0264974446
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 62.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR50N10L2 产品概述
一、产品简介
XR50N10L2 是新锐（XNRUSEMI）推出的一颗高性能 N 沟道功率 MOSFET，单只封装为 TO252-3L（DPAK）。器件额定漏源电压 100V，适合中高压开关场合，适用于开关电源、马达驱动、同步整流和功率管理等需要高电流、低导通损耗的应用。
二、主要参数与特性
- 类型：N 沟道 MOSFET
- Vdss（漏源耐压）：100 V
- Id（连续漏极电流）：50 A（热限及散热相关）
- RDS(on)（导通电阻）：17 mΩ @ Vgs = 10 V
- Vgs(th)（栅阈电压）：1.7 V
- Qg（总栅极电荷）：101 nC @ 50 V（栅驱动需求较高）
- Ciss（输入电容）：5.06 nF；Coss（输出电容）：175 pF；Crss（反向传输电容）：155 pF
- Pd（耗散功率）：62.5 W（与环境温度和散热条件有关）
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：TO252-3L（易于表面贴装和散热）
三、电气与热性能要点
XR50N10L2 在 Vgs = 10 V 时可达到 17 mΩ 的低导通电阻，导通损耗小、适合大电流场合。但器件的总栅极电荷较高（101 nC），在高频开关时对栅极驱动提出较高瞬时电流要求，建议配备驱动能力强的栅极驱动器以实现快速切换并降低开关损耗。连续 50 A 的电流能力受限于封装热阻和 PCB 散热设计，需通过合理散热（散热片、铜厚 PCB、过孔阵列）保证器件安全工作。考虑到 Pd 值受环境影响，实际功耗管理应基于系统热仿真与实测。
四、典型应用场景
- 同步整流与降压转换（DC-DC）
- 电机驱动与电子开关（如负载开/关）
- 通用开关电源与逆变器半桥/全桥拓扑
- 高电流分配与保护电路
- 音频功放（Class-D）驱动级
五、使用建议与 PCB 布局注意事项
- 栅极驱动：为充分驱动高 Qg，栅极驱动器应能提供较大电流（瞬时）以缩短开关时间；根据系统 EMI 要求选择合适的栅阻（通常 2–20 Ω 范围，按开关速度与振铃平衡）。
- 布局：尽量缩短高电流回路的走线，减小回路电感；功率地与信号地分离并在近器件处合并点接；使用大片铜箔与多层过孔增强散热。
- 保护：在感性负载或反激场合应配置合适的续流二极管、TVS 或 RC 抑制，避免 Vds 峰值超过器件极限。
- 环境：在高温或连续高负载工况中进行热仿真并考虑额外散热方案，避免长期在极限条件下工作以提升可靠性。
六、小结
XR50N10L2 以 100V 耐压、17 mΩ（10V 驱动）低导通电阻和 50A 的电流能力，结合 TO252-3L 的封装优势，适合各种中高压、高电流的功率开关场合。设计时应重视栅极驱动能力与散热布局，以发挥其低损耗、高效率的特性并保证长期可靠运行。若需进一步的电气特性曲线或封装尺寸图，可向供应商索取完整数据手册。
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