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XNRUSEMI XR100N20G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR100N20G
- Type
- XNRUSEMI
- Minimum package
- 800 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR100N20G
- Electronic Component
- 1
- Package
- TO263-7L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 1g
- Electronic Component
- 1
- Electronic Component
- BM0264974444
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 272W
- Electronic Component
- Electronic Component
- Electronic Component
- 800
- Voltage(Vdss)
- 200V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR100N20G 产品概述
一、产品简介
XR100N20G 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道功率 MOSFET，主要面向大电流同步降压转换器和高效电源应用。该器件在 200V 漏源耐压下提供极低的导通电阻和大电流能力，同时通过 100% 雪崩耐量测试和全功能可靠性认证，适合对可靠性有较高要求的工业与通信场合。
二、关键参数（主要规格）
- 类型：N 沟道沟槽式 MOSFET
- 漏源电压 Vdss：200 V
- 连续漏极电流 Id：100 A
- 导通电阻 RDS(on)：20 mΩ @ Vgs = 10 V
- 栅极阈值电压 Vgs(th)：4 V
- 总栅极电荷 Qg：134 nC @ 50 V
- 输入电容 Ciss：8.826 nF
- 输出电容 Coss：532 pF
- 反向传输电容 Crss：148 pF
- 功耗 Pd：272 W
- 工作温度：-55 ℃ ~ +150 ℃
- 封装：TO263-7L（大面积散热引脚）
- 认证：RoHS、绿色产品，100% 雪崩耐量
三、主要特点与优势
- 低 RDS(on) 与高电流承载：20 mΩ 的低导通电阻在高电流场景下显著降低导通损耗，适合作为低侧同步整流或主开关器件。
- 高电压余量：200 V 的耐压等级适用于 48V/400V 总线侧或中高压开关电源拓扑。
- 完整可靠性测试：100% 雪崩耐量与可靠性认证提供更好的容错与长期稳定性。
- 封装利于散热：TO263-7L 封装便于在大电流应用中通过 PCB 与散热器实现热管理。
四、应用场景
- 同步降压转换器（高电流输出端）
- 服务器与通信电源、分布式电源模块
- 逆变器与电机驱动的低侧开关
- 离线电源及功率因数校正中的高压开关单元（需配合适当驱动）
五、设计建议与注意事项
- 栅极驱动：Qg = 134 nC 相对较大，需选用驱动能力充足的栅极驱动器并考虑驱动电流，以控制开关损耗与开关时间。
- 开关损耗管理：在高频率应用中需权衡导通损耗与开关损耗，必要时降低开关频率或采用软开关/缓冲网络减少应力。
- 散热设计：Pd 标称值需结合 PCB 铜箔、散热器与器件结到壳温度（Tj、Tc）一起设计，保证在最大工作温度下的安全余量。
- 并联使用：可并联以降低等效 RDS(on)，但需做好散热与电流均衡设计。
- 防护电路：建议在高压应用中加入合适的 TVS、RC 缓冲或能量回收电路，利用器件的雪崩特性仍要避免反复高能量应力。
六、总结
XR100N20G 以其 200V 耐压、100A 连续电流能力和 20 mΩ 的低导通电阻，适合需要高导通性能与可靠性的同步降压及高电流电源设计。设计时应关注栅极驱动与散热管理，结合器件的电容与栅极电荷特性优化开关策略，以在效率与功率密度间取得最佳平衡。XNRUSEMI（新锐）提供 RoHS 合规与全面可靠性保证，便于在工业级产品中长期部署。
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