WMSIC Electronic Components

XNRUSEMI XR20P02M

ModelXR20P02M
PackageDFN2020-6L
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR20P02M
Type
XNRUSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR20P02M
Electronic Component
1
Package
DFN2020-6L
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.042g
Electronic Component
1
Electronic Component
BM0264974423
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
18W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR20P02M 产品概述

一、产品简介

XR20P02M 是 XNRUSEMI(新锐)推出的一款高单元密度沟槽式 P 沟道 MOSFET,专为同步降压转换器和高效功率开关应用优化。器件在低电阻与适中栅极电荷之间取得平衡,适合在 20V 级别的电源轨中作为上侧开关或高侧负载切换元件使用。产品符合 RoHS 与绿色环保要求,并提供工业级工作温度范围,适合严苛环境下的长期可靠运行。

二、主要规格亮点

  • 漏-源耐压 (Vdss):20V
  • 连续漏极电流 (Id):20A
  • 导通电阻 (RDS(on)):15 mΩ @ VGS = 4.5V
  • 耗散功率 (Pd):18W
  • 阈值电压 (VGS(th)):≈1V
  • 总栅极电荷量 (Qg):35 nC @ VGS = 4.5V
  • 输入电容 (Ciss):2.8 nF
  • 输出电容 (Coss):690 pF
  • 反向传输电容 (Crss):590 pF
  • 工作温度:-55 ℃ ~ +150 ℃
  • 封装:DFN2020-6L(小型低阻抗封装)

三、电气与热特性概要

XR20P02M 在 4.5V 驱动电压下能提供低至 15 mΩ 的导通电阻,适配轻负载至中等功率的同步整流或高侧开关场景。18W 的耗散功率与 DFN2020-6L 的热阻特性使得在紧凑布局中需注意 PCB 散热通道与焊盘设计,以保证持续 20A 电流能力时的可靠温升控制。

四、封装与可靠性

DFN2020-6L 小型封装有利于高密度 PCB 布局,器件设计兼顾了焊接可靠性与散热性能。器件通过全功能可靠性设计,适配工业级温度范围(-55 ℃~+150 ℃),适合消费类、工业控制及通信电源等长期运行场景。

五、典型应用

  • 同步降压转换器(作为高侧 P 沟道开关或同步整流)
  • 便携式和车载电源开关
  • 负载开关与反向电流保护电路
  • DC-DC 模块、功率管理单元(PMU)

六、设计与布局建议

  • 栅极驱动:Qg = 35 nC(@4.5V)提示在高速开关时需要考虑驱动电流能力,建议配合合适的栅极驱动器或在 MCU/驱动端串联小阻值栅阻以控制开关振铃与电流冲击。
  • PCB 散热:DFN2020-6L 的散热依赖底部焊盘与多层铜箔散热通道,建议在焊盘下方设计充足的热盲孔或直接连线到内部散热层以降低结壳温度。
  • 寄生电感与走线:保持源极与漏极短且宽的走线,减小寄生电感以降低开关损耗和过冲。
  • VGS 管理:注意 P 沟道栅源电压极性与幅值限制(请参阅完整数据手册以确认最大 VGS 绝对极限),避免超限击穿。

七、合规性与选型建议

XR20P02M 为 RoHS / 绿色合规产品,适合追求小封装、高效率与工业级可靠性的设计。选择时请结合系统工作电压、最大导通损耗与散热条件评估是否需要并联或选用更大封装以满足长时间高电流工作。欲了解绝对最大额定值(如 VGS 最大值、脉冲电流能力、热阻参数等)及完整特性曲线,请参阅官方完整规格书或联系 XNRUSEMI 技术支持获取样片与评估资料。

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