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XNRUSEMI XR1002B
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR1002B
- Type
- XNRUSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR1002B
- Electronic Component
- 1
- Package
- SOT23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0264974377
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR1002B 产品概述
一、产品简介
XR1002B 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道 MOSFET，采用 SOT-23 小封装设计。器件额定耐压 100V，适用于多数小功率开关和负载开关场合，兼顾低导通损耗与良好开关特性，符合 RoHS 要求并通过全功能可靠性认证，工作温度范围 -55℃ 到 +150℃。
二、主要电气参数
- 漏源电压 Vdss：100V
- 连续漏极电流 Id：2.3A
- 导通电阻 RDS(on)：280mΩ @ Vgs=10V
- 耗散功率 Pd：1W
- 栅极阈值电压 Vgs(th)：2.5V
- 总栅极电荷 Qg：5.3nC @ Vgs=10V
- 输入电容 Ciss：440pF；输出电容 Coss：14pF；反向传输电容 Crss：10pF
三、性能特点与优势
XR1002B 在 100V 级别中提供较低的导通电阻与适中栅极电荷，适合开关损耗与导通损耗需平衡的应用。较小的 Coss 与 Crss 有利于降低回灌和 Miller 效应对开关边沿的影响，从而提升开关稳定性。SOT-23 封装体积小，便于高密度 PCB 布局与自动化贴装。
四、典型应用场景
- 小功率 DC-DC 转换器的高侧或低侧开关（注意驱动电压）
- 便携式电源与电池管理系统的负载开关
- 继电器/灯源驱动的固态替代方案
- 需要 100V 耐压但电流需求在几安培以内的功率切换应用
五、选型与注意事项
XR1002B 的 RDS(on) 标注在 Vgs=10V 条件下，应注意该器件针对 10V 驱动电压优化；在 3.3V 或 5V 逻辑电平下导通电阻会显著增大，若使用低电压门极驱动，应评估导通损耗及发热。器件 Pd=1W（SOT-23）意味着热阻较大，PCB 需做好散热设计：加大铜箔面积，必要时使用底层散热通孔以降低结温。
六、驱动与可靠性建议
推荐通过合适的栅极驱动电路提供稳定的 10V 驱动以达到规范导通电阻；栅极可并联阻容以抑制振铃，避免瞬态过压。由于工作温度上限可达 150℃，在高温或长时间高功率工况下需留足安全裕度。器件已通过全功能可靠性认证，适合商用与工业级应用。
七、总结
XR1002B 以其 100V 耐压、适中 RDS(on) 与较低的栅极电荷，在 SOT-23 小型封装中为小功率开关与负载开关提供了良好的性价比与集成度。设计时注意驱动电压与散热约束，可在多种便携与工业应用中实现稳定可靠的开关性能。若需进一步的封装尺寸、SOA 曲线或热阻数据，可联系 XNRUSEMI 获取完整数据手册。
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