WMSIC Electronic Components

XNRUSEMI XR150N04

ModelXR150N04
PackageTO252-3L
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR150N04
Type
XNRUSEMI
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR150N04
Electronic Component
1
Package
TO252-3L
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
1g
Electronic Component
1
Electronic Component
BM0264974387
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
115W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
40V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR150N04 — 高性能N沟道MOSFET产品概述

一、产品概述

XR150N04(品牌:XNRUSEMI/新锐)是一颗面向同步降压转换器和高功率开关场合的高性能N沟道MOSFET。器件额定漏源电压Vdss为40V,连续漏极电流高达150A,导通电阻RDS(on)仅3.1mΩ(Vgs=10V),适合高效率、低损耗的电源管理与功率变换应用。器件符合RoHS与绿色环保要求,100%保证雪崩耐量,并通过完整的功能可靠性认证,封装为TO252-3L(DPAK 形式),便于表面安装与散热设计。

二、主要参数亮点

  • 漏源电压:Vdss = 40V,适应中低压电源域。
  • 连续漏极电流:Id = 150A,满足大电流应用需求。
  • 导通电阻:RDS(on) = 3.1mΩ(Vgs=10V),导通损耗低,有利于提高转换效率。
  • 栅极阈值:Vgs(th) = 2.5V(典型),易于配合常见驱动电压。
  • 总栅极电荷:Qg = 112nC(@10V),在快速开关时需关注驱动能力与开关损耗。
  • 寄生电容:Ciss = 6.46nF,Coss = 455pF,Crss = 276pF,便于评估开关性能与回路设计。
  • 功耗与温度:器件耗散功率Pd = 115W,工作温度范围宽(-55℃ ~ +150℃)。

三、典型应用场景

  • 同步降压转换器(主开关/同步整流)
  • 服务器/通信电源和高效DC-DC模块
  • 电机驱动与功率因数校正(PFC)前端(中低压区)
  • 负载开关、高效功率分配、车载电子(非高压域)
    该器件特别适合需要低导通损耗与大电流能力的场合。

四、设计与使用要点

  • 驱动设计:由于Qg较大(112nC@10V),建议选配能够提供足够电流的栅极驱动器,以保证开关转换时间和降低开关损耗。
  • 热管理:尽管Pd=115W,但实际散热依赖PCB散热、铜箔面积与散热器,建议在高电流应用中采用足够的散热面积和热通道设计。
  • 开关损耗评估:依据Ciss/Coss/Crss与工作频率评估开关能量损耗,必要时在布局中增加栅阻或吸收元件以控制电磁干扰与振铃。
  • 并联使用:若需进一步降低等效RDS(on)或提升电流能力,应注意电流共享、均流电阻及门极网络匹配。
  • 可靠性与保护:器件已做100%雪崩耐量测试,但在系统设计中仍应考虑过流、过温与稳压保护策略。

五、封装与可靠性

TO252-3L(DPAK)封装兼顾安装方便与热性能,适配SMT工艺。器件通过绿色认证与完整功能可靠性认证,适合商用与工业级产品设计要求。

总结:XR150N04以低RDS(on)、大电流能力和完整的可靠性验证,为高效同步降压与功率开关场合提供了可靠的器件选择。在系统设计中需综合考虑栅极驱动、电路布局与热管理,以发挥其最佳性能。

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