WMSIC Electronic Components

XNRUSEMI XR10N10

ModelXR10N10
PackageTO-252-3L
BrandXNRUSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XNRUSEMI XR10N10
Type
XNRUSEMI
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XNRUSEMI
Electronic Component
XR10N10
Electronic Component
1
Package
TO-252-3L
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
1g
Electronic Component
1
Electronic Component
BM0264974386
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
34.7W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
100V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XR10N10 产品概述

一、规格亮点

XR10N10 是一款高单元密度的沟槽式 N 沟道 MOSFET(封装:TO-252-3L),面向大多数同步降压和开关功率应用。主要电气参数如下:

  • 漏源耐压 Vdss:100 V
  • 连续漏极电流 Id:10 A
  • 导通电阻 RDS(on):150 mΩ @ Vgs = 10 V
  • 最大耗散功率 Pd:34.7 W
  • 阈值电压 Vgs(th):2.5 V
  • 总栅极电荷 Qg:26.2 nC(测试点 VDS = 80 V)
  • 输入电容 Ciss:1.023 nF;反向传输电容 Crss:25 pF
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 特性:100% 雪崩能量(EAS)保证,RoHS/绿色合规

二、主要特性与性能解读

XR10N10 采用沟槽栅结构与高单元密度设计,在保持较低导通电阻的同时维持良好的开关特性。RDS(on) 标注在 Vgs=10 V 条件下适合使用典型的驱动电压(例如高侧/低侧驱动器或 10–12 V 门极驱动)。阈值电压约 2.5 V,仅作为导通起始参考,不能保证在 5 V 或更低栅压下达到额定 RDS(on)。

栅极电荷 Qg=26.2 nC 表明在高频开关时需使用驱动器提供较大脉冲电流以缩短上、关时间,平衡开关损耗与 EMI。较小的 Crss 有利于降低米勒效应引起的误触发和开关过渡能量。

三、典型应用场景

  • 同步降压(buck)转换器的高/低侧 MOSFET
  • 中小功率 DC-DC 电源模块与点对点转换
  • 电池管理与电源路径控制
  • 电机驱动及功率开关单元(在额定电流与散热允许范围内)
  • 通用开关与保护电路

四、设计与布局建议

  • 栅极驱动:为达到标称 RDS(on),建议采用 10 V 驱动;驱动器需能提供足够的峰值电流以快速充放 Qg,必要时增加合适阻尼(门极电阻)以控制 dv/dt 与 EMI。
  • 热管理:TO-252-3L 的热阻受 PCB 铜面积与散热条件影响明显。34.7 W 的 Pd 通常在理想散热条件(例如大面积散热铜/散热片或良好空气流通)下才可实现,请根据实际 PCB 热阻计算结温并留足裕量。
  • 布局:尽量缩短源、漏、栅的回流路径,减小寄生电感;功率回路使用宽铜箔、靠近封装焊盘布线;关断瞬态处考虑 RC 或 RC+TVS 抑制过冲。
  • 驱动/开关频率:在高频下需权衡导通损耗与开关损耗,考虑并联器件或采用更低 RDS(on) 的 MOSFET 以减小总体损耗。

五、可靠性与合规

XR10N10 提供 100% 雪崩能量(EAS)测试保证,适合有被动过冲或短时能量承受需求的应用。产品符合 RoHS 与绿色环保要求。实际设计中建议参考完整数据手册的 SOA、热阻和绝对最大额定值,进行仿真与样机验证以确保长期可靠性。

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