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YANGJIE S8550-H S8550
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
13
specifications
Core information
- Product name
- YANGJIE S8550-H
- Type
- SOT-23(TO-236)
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- YANGJIE
- Electronic Component
- S8550-H
- Electronic Component
- 1
- Package
- SOT-23(TO-236)
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0230005008
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S8550-H 产品概述
一、产品简介
S8550-H 是扬杰（YANGJIE）推出的一款小功率 PNP 双极性晶体管，采用 SOT-23 封装，适用于小信号放大与低压开关驱动。器件在 25V 集电极—发射极击穿电压下，可安全工作于 500mA 的集电极电流范围内，兼顾开关与放大场合的需求。
二、主要特性
- 晶体管类型：PNP
- 最大集电极电流 Ic：500mA
- 集—射击穿电压 VCEO：25V
- 耗散功率 Pd：300mW（SOT-23 封装）
- 直流电流增益 hFE：120（Ic=500mA, VCE=1V）
- 特征频率 fT：150MHz，适合高速小信号应用
- 集电极截止电流 Icbo：100nA（典型）
- 集电极饱和电压 VCE(sat)：600mV（典型）
- 射基极击穿电压 VEBO：5V
- 工作温度范围：-55℃ ～ +150℃
三、电气性能与使用建议
在工作于线性区时，按标称 hFE=120 估算，当 Ic=500mA 时基极直流电流约为 4.2mA（Ib≈Ic/hFE）。实际驱动或进入饱和时需增加基极电流，建议根据具体开关损耗与响应时间调整驱动比。器件的 fT=150MHz 表明在高频小信号放大或快速开关场合具有良好响应能力。
四、封装与热管理
SOT-23 小外形带来良好的PCB面积利用率，但器件耗散功率仅 300mW，需注意散热设计。推荐在焊盘周围留足铜箔以降低热阻，避免长时间在高功率或高环境温度下工作；必要时采取带散热层的 PCB 布局或并联使用以分散热量。
五、典型应用
- 小信号放大和前置放大器
- 低压开关驱动与电平转换
- 电池供电设备的保护与控制电路
- 音频放大前级、驱动级应用
六、注意事项
避免对基极施加超过 VEBO=5V 的反向电压；设计时考虑 Icbo 引起的微小漏电流；在高频或高电流条件下验证实际增益与饱和特性，确保器件在安全工作区内使用。
如需选型与样片，可检索型号 S8550-H（YANGJIE），并结合 PCB 热设计与实际应用场景做进一步验证。
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