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YANGJIE YJQ15GP10A
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
13
specifications
Core information
- Product name
- YANGJIE YJQ15GP10A
- Type
- DFN3333-8L
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- YANGJIE
- Electronic Component
- YJQ15GP10A
- Electronic Component
- 1
- Package
- DFN3333-8L
- Electronic Component
- 0.09g
- Electronic Component
- 1
- Electronic Component
- BM0227778289
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
YJQ15GP10A 产品概述
一、器件简介
YJQ15GP10A 是扬杰（YANGJIE）推出的一款 P 沟道功率场效应晶体管，额定漏源电压 (Vdss) 为 100V，针对高电压、低功耗的反向侧开关、同步整流和高端开关场合设计。封装为 DFN3333-8L，适合贴片安装、散热与尺寸平衡的应用场景。
二、主要电参数（关键信息）
- 类型：P 沟道 MOSFET
- Vdss：100V
- 连续漏极电流 Id：15A
- 导通电阻 RDS(on)：110mΩ @ Vgs = 10V
- 阈值电压 Vgs(th)：2.5V @ Id = 250µA
- 总栅极电荷 Qg：20.1nC @ Vgs = 10V
- 输出电容 Coss：119pF；输入电容 Ciss：1.051nF；反向传输电容 Crss：25pF
- 耗散功率 Pd：43W
- 数量：单颗（1个 P 沟道）
三、性能解析
- 导通损耗与开关损耗：110mΩ 的 RDS(on) 在低至中等电流情况下能提供较低导通损耗；Qg = 20.1nC 表明栅容较大，驱动时需考虑较高的驱动能量与驱动速度。
- 开关特性与寄生电容：Ciss = 1.051nF 与 Crss = 25pF、Coss = 119pF 综合决定了在高频切换时的能量损耗与电压应力分布，适合中低频率开关或要求稳态导通的应用。
- 温度与功耗能力：工作温度范围 -55℃ ~ +150℃，Pd = 43W 表示在良好散热条件下具有较强功率处理能力，适合在散热设计到位的系统中使用。
四、封装与热管理
DFN3333-8L 为小型扁平贴片封装，有利于 PCB 布局密集度与热路径设计。建议在 PCB 底层或散热垫上增加铜箔、热过孔与贴片焊盘，以降低结-环境热阻，保证持续大电流工作时的温升受控。
五、典型应用场景
- 高端开关（如电源管理中的高侧开关）
- 同步整流电路（P 沟道用于高侧快速切换）
- 反相保护与负载断开控制
- 工业控制与汽车电子（需注意高温工作与热管理）
六、选型与使用建议
- 驱动电压：RDS(on) 规格以 Vgs = 10V 标定，若采用低压驱动（例如 4.5V 或 5V），需评估实际 RDS(on) 上升对损耗的影响。
- 驱动能力：栅极电荷较大（20.1nC），驱动器应具备足够电流以满足所需开关速度并限制开关损耗。
- 布局注意：减小回流电感、优化热路径、并考虑 TVS 或 RC 抑制网络来控制开关尖峰与振铃。
- 工作环境：在高温或连续大电流工况下，应保证散热设计符合 Pd 限值，避免器件因过热进入热失控。
以上为 YJQ15GP10A 的产品概述与工程应用建议。在具体电路设计中，建议结合实际工作电压、频率与热条件做仿真与样机验证，以保证可靠性与效率。
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