WMSIC Electronic Components

YANGJIE YJQ50N03B

ModelYJQ50N03B
PackageDFN3333-8L
BrandYANGJIE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

13 specifications

Core information

Product name
YANGJIE YJQ50N03B
Type
DFN3333-8L
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
YANGJIE
Electronic Component
YJQ50N03B
Electronic Component
1
Package
DFN3333-8L
Electronic Component
0.12g
Electronic Component
1
Electronic Component
BM0228747243
Electronic Component
Electronic Component
Electronic Component
5000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

YJQ50N03B 产品概述

一、概述

YJQ50N03B 是扬杰(YANGJIE)推出的一款高性能 N 沟道功率 MOSFET,额定漏源电压 30V,连续漏极电流可达 50A,导通电阻极低,适用于多种开关电源、电机驱动及负载开关场景。器件采用 DFN(3.3×3.3mm) 小封装,工作温度范围宽 (-55℃ 至 +175℃),适合工业级与汽车级应用的高可靠性要求。

二、主要参数

  • 类型:N 沟道 MOSFET
  • 漏源电压 Vdss:30V
  • 连续漏极电流 Id:50A
  • 导通电阻 RDS(on):3.9 mΩ @ VGS=10V, ID=15A
  • 阈值电压 VGS(th):2.5V
  • 总栅极电荷 Qg:46.3 nC @ VGS=10V
  • 耗散功率 Pd:30W
  • 输入电容 Ciss:2.191 nF @ 15V
  • 反向传输电容 Crss:247 pF @ 15V
  • 封装:DFN (3.3×3.3 mm)
  • 工作温度:-55℃ ~ +175℃

三、器件特点与优势

  • 低导通电阻(3.9 mΩ)在中等电流下能显著降低导通损耗,提高系统效率。
  • 较高的连续电流能力(50A)与较大功率耗散(30W),适合高密度功率设计。
  • 总栅极电荷 46.3 nC 和较大的输入/输出电容值表明驱动功率需考虑开关损耗与驱动能力匹配。
  • DFN 小封装便于实现高密度布局,同时需配合较大 PCB 铜箔散热以保证热性能。

四、应用场景

  • 同步降压/升压转换器 MOS 开关管
  • DC-DC 开关电源、点对点供电模块
  • 电机驱动、MOSFET H 桥与半桥拓扑
  • 负载开关与保护电路
  • 汽车电子及工业控制等需要高可靠性的场合

五、设计与使用建议

  • 驱动:由于 Qg 较大,建议使用能够提供足够峰值电流的驱动器或缓冲器,并根据开关速度选配合适的栅阻以平衡 EMI 与开关损耗。
  • 版图与散热:DFN 封装应在 PCB 下方设计通孔和大面积散热铜箔(热垫),并与多层板的内部/底层铜连接以降低结温。
  • 保护:在高 dv/dt 场合考虑并联栅电阻与 RC 吸收网络以抑制振铃与过压。必要时加入过流与过热保护。
  • 测试:在实际工作条件下验证 RDS(on) 随温度变化、开关损耗及热阻,确保长期可靠性。

六、封装与采购

YJQ50N03B 提供单只装(数量:1)或按制造商包装标准批量供应,封装为 DFN(3.3×3.3)。在选型时请确认供货批次及器件的温度等级以满足最终应用的可靠性要求。

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