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动态随机存取存储器(DRAM)
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MT49H16M36SJ-18 IT:B TR MT49H16M36SJ FBGA-144(11x18.5)
- 型号
- MT49H16M36SJ-18 IT:B TR
- 封装
- FBGA-144(11x18.5)
MT49H16M36SJ 25E:B TR MT49H16M36SJ FBGA-144(11x18.5)
- 型号
- MT49H16M36SJ-25E:B TR
- 封装
- FBGA-144(11x18.5)
MT49H32M18SJ 25E:B TR MT49H32M18SJ FBGA-144(11x18.5)
- 型号
- MT49H32M18SJ-25E:B TR
- 封装
- FBGA-144(11x18.5)
MT44K16M36RB 093F:B TR MT44K16M36RB BGA-168(13.5x13.5)
- 型号
- MT44K16M36RB-093F:B TR
- 封装
- BGA-168(13.5x13.5)
MT49H32M18CSJ 18:B TR MT49H32M18CSJ FBGA-144(11x18.5)
- 型号
- MT49H32M18CSJ-18:B TR
- 封装
- FBGA-144(11x18.5)
MT44K64M18RB 083F:A TR MT44K64M18RB BGA-168(13.5x13.5)
- 型号
- MT44K64M18RB-083F:A TR
- 封装
- BGA-168(13.5x13.5)
Common I/O RLDRAM 2 Memory，533MHz DDR 操作，差分输入时钟，数据有效信号 IS49NLC18160A
- 型号
- IS49NLC18160A-25EWBL
- 封装
- -
576Mb Separate I/O RLDRAM 2 Memory，533MHz DDR 操作，差分输入时钟，38.4Gb/s 峰值带宽 IS49NLS96400A
- 型号
- IS49NLS96400A-18WBLI
- 封装
- -
Common I/O RLDRAM 2 Memory，533MHz DDR 操作，差分输入时钟，38.4Gb/s 峰值带宽 IS49NLC96400A
- 型号
- IS49NLC96400A-18WBLI
- 封装
- -