WMSIC Electronic Components

BLUE ROCKET S8550M-D

ModelS8550M-D
PackageSOT-23
BrandBLUE ROCKET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BLUE ROCKET S8550M-D
Type
BLUE ROCKET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BLUE ROCKET
Electronic Component
S8550M-D
Electronic Component
1
Package
SOT-23
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0226538851
Transistor Type
PNP
Frequency(f T)
200MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
800mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

S8550M-D 产品概述

一、产品概述

S8550M-D 是 BLUE ROCKET 品牌的一款 PNP 型双极晶体管(普通三极管),采用 SOT-23 小型封装,适用于低压、中等电流的开关与放大场合。器件耐压为 25V,最大集电极电流可达 800mA(需关注封装的耗散能力),在 100mA 工作点时直流电流增益 (hFE) 可达 160(VCE=1V),对便携与空间受限的电路具有良好适配性。

二、主要参数

  • 晶体管类型:PNP(单只器件,数量:1)
  • 集射极击穿电压 Vceo:25V
  • 最大集电极电流 Ic:800mA(脉冲或短时可达更高,长期工作应受限于热耗散)
  • 直流电流增益 hFE:160(Ic=100mA,VCE=1V)
  • 集电极截止电流 Icbo:100nA
  • 射基极击穿电压 Vebo:6V
  • 特征频率 fT:200MHz(高频性能良好)
  • 集射极饱和电压 VCE(sat):600mV(测试条件:Ic=500mA 或 Ic=50mA,具体请参见完整数据表)
  • 最大耗散功率 Pd:200mW(SOT-23 小封装的热限制,应注意功耗管理)
  • 封装:SOT-23(表面贴装)

三、关键特性

  • 高电流增益:在中等电流工作点(100mA)下 hFE≈160,便于作为放大级或驱动级使用,能减小基极驱动电流需求。
  • 高频特性:fT≈200MHz,适合对速度有要求的开关或信号放大场合。
  • 低漏电流:Icbo≈100nA,有利于静态功耗控制和高阻抗电路稳定性。
  • 小尺寸封装:SOT-23 有利于密集贴片布局,但因热阻较大,需考虑散热设计。

四、典型应用

  • 低压电源或信号系统中的高端(高侧)开关与驱动器。
  • 音频前级或小信号放大电路中的 PNP 放大器/偏置元件。
  • 与互补 NPN 器件配对构成推挽输出或补偿级电路。
  • 便携式设备、消费电子、指示灯驱动、小直流电机/执行器的短时驱动(注意热限制)。

五、封装与热管理

SOT-23 小封装适合表面贴装工艺,但封装热阻较大,器件最大耗散功率为 200mW。在接近 100mA 以上电流时,应:

  • 减少器件上的稳态功率耗散(降低 VCE 或使用脉冲驱动)。
  • 在 PCB 设计中为器件引脚和散热焊盘提供尽可能大的铜面,以改善散热。
  • 考虑并联器件或使用更大封装(若系统允许)以分担热流。

六、使用注意事项

  • 工作电压不得超过 Vceo=25V,基-发极电压不得超过 Vebo=6V。
  • 虽然最大 Ic 标称为 800mA,但长期持续大电流会受 Pd 和热阻限制,应以热平衡为准则设计。
  • VCE(sat) 在大电流下可达数百毫伏,实际驱动负载时需考虑电压降影响。
  • 引脚排列与封装标注可能随制造商不同而异,实际应用前请参考 BLUE ROCKET 的完整数据手册与封装图纸以确认引脚定义和测试条件。

七、采购与选型建议

S8550M-D 适合需要小体积、较高增益且工作电压不超过 25V 的低压电路。选型时应评估:

  • 实际平均功耗与瞬态脉冲幅度,确保在 SOT-23热容范围内工作;
  • 是否需要更大功率或更低饱和压的替代品以满足系统效率要求;
  • 是否需要配对的 NPN 器件以实现互补电路。

如需样片测试或了解更多器件特性(完整的电气表格、温度特性、引脚图),建议索取 BLUE ROCKET 官方数据手册以获得详细参数与典型电路参考。

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