WMSIC Electronic Components

BLUE ROCKET 2SD882-P

Model2SD882-P
PackageTO-126F-3
BrandBLUE ROCKET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BLUE ROCKET 2SD882-P
Type
BLUE ROCKET
Minimum package
500 袋

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BLUE ROCKET
Electronic Component
2SD882-P
Electronic Component
1
Package
TO-126F-3
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.812g
Electronic Component
1
Electronic Component
BM0257505419
Transistor Type
NPN
Frequency(f T)
90MHz
Power Dissipation(Pd)
10W
Electronic Component
Electronic Component
Electronic Component
500
Collector Current(Ic)
3A

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SD882-P 产品概述

一、概述

2SD882-P 是一款通用 NPN 功率晶体管,封装为 TO-126F-3,品牌 BLUE ROCKET。器件适用于中低压、中等电流的开关与放大场合,兼顾良好的电流放大能力与较快的特征频率,便于在功率放大、驱动级和开关电路中使用。

二、主要参数

  • 晶体管类型:NPN
  • 集电极电流 Ic:3 A(最大)
  • 集-射击穿电压 Vceo:30 V(Vcbo=40 V)
  • 功耗 Pd:封装默认热条件下常见 Pc≈1 W(TO-126,无散热片);在良好散热条件下系统级最大耗散可更高(资料中有 10 W 标注,请以实际器件数据手册为准)
  • 直流电流增益 hFE:约 160(测试条件:Ic=1 A,Vce=2 V)
  • 特征频率 fT:约 90 MHz
  • 集电极截止电流 Icbo:约 1 µA
  • 集电极饱和电压 VCE(sat):典型约 0.5 V(在大电流条件下测得,如 Ic=2 A)
  • 发-基击穿电压 Vebo:5 V
  • 封装:TO-126F-3
  • 数量:1 只

(注:上表综合了提供的参数;不同测试条件和封装散热情况会影响额定功耗与温升,使用前建议参考完整数据手册。)

三、主要特性与优势

  • 低饱和压降:在较大集电极电流下仍能保持约 0.5 V 的 VCE(sat),有利于降低开关损耗。
  • 高增益:在 1 A 工作点附近 hFE≈160,使其在驱动级或小功率放大器中易于获得所需增益,减小基极驱动电流需求。
  • 较高频率响应:fT≈90 MHz,适合于常见音频以及低中频信号放大与切换。
  • 低漏电流:Icbo≈1 µA,有利于提高静态精度与低漏电流应用的可靠性。

四、典型应用

  • 低中功率开关电路(继电器/小电机驱动)
  • 音频功率放大器前级或补偿级
  • 电源管理中的开关/稳压辅助器件
  • 通用驱动与缓冲电路

五、热管理与使用注意

  • TO-126 封装在无额外散热措施下的额定耗散通常受限(典型 Pc≈1 W);如需在接近最大 Ic(3 A)下长时间工作,必须采取良好散热或将芯片安装到合适的散热片上。
  • 发-基反向击穿 Vebo≈5 V,禁止在使用过程中使 Vbe 反向超过此值以免损伤结。
  • 对于开关场合,应注意基极限流与保护(外接基极电阻、阻尼网络或肖特基保护二极管),防止过流或瞬态冲击。
  • 建议在设计前查阅厂方完整数据手册,确认引脚排列、绝对最大额定值及热阻参数。

六、替代型号与选型建议

若需要更高功耗或更高电压裕量,可考虑封装更大、Pd 更高的同类 NPN 功率晶体管;若要求更高频率或更低 VCE(sat),可查找低饱和、快速开关型替代器件。选型时以最大工作电流、散热条件和安全裕量为主,必要时进行热仿真与实际测量验证。

如需我帮忙核对具体数据手册(包括引脚定义与热阻参数)或按具体电路给出驱动/散热设计建议,请提供电路工作点与散热条件。

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