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CJ CJL2301
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CJ CJL2301
- Type
- CJ
- Minimum package
- 3000
Technical parameters
- Electronic Component
- CJ
- Electronic Component
- CJL2301
- Electronic Component
- 1
- Package
- SOT-23-6L
- Electronic Component
- 2 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.041g
- Electronic Component
- 1
- Electronic Component
- BM0228272810
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 405pF
- Gate (Qg)
- [email protected]
- Resistor(RDS(on))
- 90mΩ@4.5V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CJL2301 产品概述
一、产品简介
CJL2301 是江苏长电/长晶（CJ）出品的双路 P 沟道场效应管，封装为 SOT-23-6L，面向低压高侧开关与功率路径管理场景。每路器件的最大漏源电压为 20V，连续漏极电流 2.3A，导通电阻 RDS(on) 在 VGS=4.5V 时典型为 90mΩ。器件单个功耗标称为 350mW，工作温度范围宽（-55℃ ~ +150℃），适合便携与嵌入式系统的电源管理应用。
二、关键电气参数
- 漏源电压（Vdss）：20V，适用于低压至中低压系统。
- 连续漏极电流（Id）：2.3A，满足一般负载开关及保护需求。
- 导通电阻（RDS(on)）：90mΩ @ VGS=4.5V，低阻抗有利于降低导通损耗。
- 阈值电压（VGS(th)）：约 0.4V，属于低阈值器件，有利于在较低驱动电压下导通。
- 栅极电荷（Qg）：5.5nC @4.5V，栅驱动能量适中，开关损耗受此项影响。
- 输入电容（Ciss）：405pF，反向传输电容（Crss）：55pF，影响开关过渡过程与死区设计。
- 功耗与温度：单器件耗散功率 350mW，工作温度 -55℃ ~ +150℃。
三、典型应用场景
- 电池管理与电源路径选择（高侧开关）
- 负载开关、反向电流阻断与电源切换
- 便携设备、移动终端和低压DC-DC前端保护
- 低压大电流模拟开关与互补MOSFET配合使用
四、驱动与布局建议
- 作为 P 沟道高侧开关时，源极通常接近电源正轨，栅极需被拉至高电平以关断；在驱通时需将栅极拉低，VGS=4.5V 可获得标称 RDS(on)。
- 5.5nC 的总栅极电荷要求适配合适的驱动器，若驱动能力不足会增加开关损耗与上升/下降时间。
- SOT-23-6L 封装散热受限，建议在 PCB 上使用大面积铜箔扩散热量并缩短高流电流回路的走线长度，以降低局部温升。
- 输入/输出引脚布局要尽量减小回路面积以降低寄生电感和电磁干扰。
五、使用注意事项
- 请参考完整数据手册确认最大 VGS 与极限参数，避免超出栅源电压和功耗极限。
- 在高频开关或并联使用时注意热均衡与电流分配，SOT-23-6L 的热阻限制并联效果。
- Crss 与 Ciss 会影响开关过渡中的电压应力与功耗，设计驱动与补偿网络时应予以考虑。
六、选用建议
CJL2301 适合需要低到中等电阻、低压高侧开关和双通道集成的应用；若系统需更高电流或更低导通损耗，应考虑更大封装或并联器件。选型时应综合考量导通损耗、开关损耗、封装散热能力及实际工作电压/电流曲线，并参照厂方完整规格书以保证可靠性。
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