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CJ MMBD4448HTW
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CJ MMBD4448HTW
- Type
- CJ
- Minimum package
- 3000
Technical parameters
- Electronic Component
- CJ
- Electronic Component
- MMBD4448HTW
- Electronic Component
- 1
- Package
- SOT-363
- Electronic Component
- Switch Diode
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0230031843
- Current
- 250mA
- Diode
- 3
- Current(Ir)
- 100nA@70V
- (Vf)
- 1.25V@150mA
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 80V
- (Trr)
- 4ns
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBD4448HTW 产品概述
一、器件简介
MMBD4448HTW 是 CJ（江苏长电/长晶）生产的三只独立开关二极管，封装为 SOT-363（SC-88）小型贴片封装。器件针对高速开关和小信号整流场景设计，体积小、切换快，适合空间受限的便携和通信类电路。
二、主要电气参数（典型/额定）
- 正向压降 Vf = 1.25 V @ If = 150 mA
- 直流反向耐压 Vr = 80 V
- 正常整流电流（平均）If(AV) = 250 mA
- 峰值非重复浪涌电流 Ifsm = 2 A（脉冲）
- 功耗耗散 Pd = 200 mW
- 反向电流 Ir = 100 nA @ 70 V
- 反向恢复时间 Trr = 4 ns
这些参数表明该器件在高压（最高 80 V）、高速切换与中小电流场合具有良好性能。
三、性能要点与设计注意
- 热耗散与电流限制：额定耗散 Pd=200 mW 与 Vf=1.25 V 联合决定了连续导通时的安全电流（近似 Pd/Vf ≈ 160 mA）。尽管If(AV)标称250 mA，250 mA通常为短时整流能力或受PCB散热条件限制的额定值，布局时建议功率降额以保证可靠性。
- 开关特性：Trr=4 ns 属于快速恢复等级，适合高速开关、脉冲整形、逻辑接口等场景，但在高频大电流开关中仍需考虑恢复损耗与电磁干扰。
- 反向特性：Vr=80 V 和 Ir 在 70 V 时仅 100 nA，适合需要较高反向耐压、低漏电的保护/钳位用途。
- 冲击能力：Ifsm=2 A 表示短脉冲浪涌能力，可处理瞬态电流，但不可用于频繁大电流循环。
四、典型应用
- 开关电路与高速整流（脉冲整流、时钟/数据恢复）
- 输入/输出保护与反向极性保护（需配合其他元件考虑电压和功耗）
- 电平移位、钳位电路、浪涌吸收与钳位二极管阵列
- 通信设备、便携式电子、工业控制中空间受限的保护与整形电路
五、封装与封装注意事项
SOT-363（SC-88）体积小、适合高密度贴片。焊接采用回流工艺，推荐按照制造商的回流曲线和 PCB 焊盘设计规范。因器件热阻较大，需通过合适的铜皮面积、散热铜箔和多层板设计改善散热。并联使用时需注意正向压降匹配问题，不建议直接并联无均流措施。
六、选型建议与可靠性
选型时结合实际工作电流、占空比与散热条件，若连续电流接近或超过 Pd/Vf 建议换用更大功耗或更低 Vf 的器件。用于关键系统或高温环境时应做降额设计与可靠性验证。总体而言，MMBD4448HTW 以其高耐压、低漏电与快速恢复特性，适合需要节省PCB面积且有中等电流与高速切换需求的场合。
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