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FOSAN S8550
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FOSAN S8550
- Type
- FOSAN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FOSAN
- Electronic Component
- S8550
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.034g
- Electronic Component
- 1
- Electronic Component
- BM0228561506
- Transistor Type
- PNP
- Frequency(f T)
- 120MHz
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 500mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S8550 产品概述
一、主要特性
S8550（FOSAN 富信，SOT-23 封装）是一款通用小功率三极管，适用于小信号放大与开关负载。器件关键特性如下：
- 集电极电流 Ic：500 mA（最大）
- 集-射极击穿电压 Vceo：25 V
- 最大耗散功率 Pd：225 mW（封装热限，Ta=25°C 典型值）
- 直流电流增益 hFE：400（条件：Ic=100 mA，Vce=1 V，典型值）
- 特征频率 fT：120 MHz（典型）
- 集电极截止电流 Icbo：100 nA（常温）
- 集电极饱和电压 VCE(sat)：≤600 mV（条件：Ic=500 mA，Ib=50 mA）
- 发射—基极击穿电压 Vebo：5 V
二、电气参数概览
S8550 在中等电流和中频范围内表现良好。高 hFE 值使其在放大器级中能以较小基极驱动获得较大集电极电流；fT=120 MHz 允许在 VHF 较低端的信号处理。需要注意的是，SOT-23 的耗散功率受限（225 mW），在高电流工作时必须关注结温和热耗散，避免长时间满载工作。
三、典型应用场景
- 低功率功率放大与前置放大器（小信号放大）
- 低压电源开关与驱动（继电器/LED 驱动的低频场合）
- 信号整形、缓冲与电平转换
- 移动设备、家电与消费类电子的通用放大单元
四、封装与热管理
S8550 常见为 SOT-23 小外形封装，适合高密度 PCB 布局。SOT-23 的热阻较大，Pd=225 mW 为器件在环境温度 25°C 下的功率极限，建议设计时：
- 在高 Ic 工作条件下采用短脉冲驱动或降低占空比；
- 增加 PCB 散热铜箔面积，使用散热过孔；
- 按厂表给出功率随环境温度的降额曲线进行设计。
五、选型与使用建议
- 若工作电流长期接近数百毫安，优先评估热耗散并考虑更大封装器件（如SOT-223或TO-220）；
- 基极反向电压不可超过 Vebo=5 V，防止基-发结损坏；
- 饱和开关时需提供足够基极电流（例如 Ib≈Ic/10）以降低 VCE(sat)；
- 检查实际器件 Datasheet 的引脚顺序与最大额定值（不同厂商封装管脚可能差异）。
六、典型电路示例与注意事项
- 放大器：在共射放大配置中，利用高 hFE 可减小偏置电阻，提高输入阻抗；但需注意早期效应与温漂；
- 开关：当作为低压开关驱动负载时，设计基极限流并计算饱和基流以确保 VCE(sat) 在可接受范围内；
- 测试与可靠性：建议在样机阶段验证温升、长期漂移和反向泄漏随温度变化情况。
常见封装引脚排列（仅供参考，不同厂商可能不同，请以厂商 Datasheet 为准）：SOT-23 引脚 1：基极（B），2：发射极（E），3：集电极（C）。总体而言，S8550 在小体积与中等电流场合提供良好的增益与频率特性，适合通用小信号放大与低压开关应用。
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