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FOSAN 2SA1162
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FOSAN 2SA1162
- Type
- FOSAN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FOSAN
- Electronic Component
- 2SA1162
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0264886502
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- PNP
- Frequency(f T)
- 80MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SA1162（PNP）SOT-23 — 产品概述
一、主要参数与特性
2SA1162 为 PNP 小信号晶体管，FOSAN（富信）生产的 SOT-23 封装型号，适合体积受限的通用开关与放大场合。主要电气参数包括：
- 集电极电流 Ic：150 mA（最大）
- 集—射极击穿电压 Vceo：50 V
- 耗散功率 Pd：300 mW（典型，需按温度降额）
- 直流电流增益 hFE：约 400（小信号区，高增益）
- 特征频率 fT：80 MHz（适合音频到低频射频应用）
- 集电极截止电流 Icbo：100 nA（低漏电，适合高阻输入）
- 集电极饱和电压 VCE(sat)：约 300 mV（饱和导通损耗低）
- 射基极反向击穿 Vebo：5 V（注意基极-发射极反向限值）
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：SOT-23；数量：1 颗
二、性能特点与应用价值
- 高 hFE（~400）：在低电流工作点（微安至数十毫安）下可获得较大放大倍数，适合放大级和检波、前置放大器等场合。
- fT = 80 MHz：支持较快的信号响应，可用于音频放大、驱动级及部分低功率 RF 前端。
- 低 Icbo（100 nA）：适合用于高阻输入或漏电敏感的电路，如电池监测、仪表放大。
- 低 VCE(sat)（≈300 mV）：作为开关使用时导通损耗小，减少发热。
- 小体积 SOT-23：便于表贴设计、用于便携或高密度电路板。
三、典型应用场合
- 小信号放大器、前置放大与电平移位电路
- 便携设备中的低电流开关与驱动
- 模拟开关、阻塞/偏置网络、高阻输入缓冲
- 与 NPN 晶体管配合组成互补推挽或差分级
四、使用建议与注意事项
- 基极反向电压不得超过 Vebo=5 V，防止基—发射结反偏击穿。
- 虽然 Ic 最大为 150 mA，但需与 Pd（300 mW）和热阻配合考虑，长时间大电流工作会受功耗限制。建议参考厂商的降额曲线（ambient 温度 vs Pd）。
- SOT-23 封装散热受限，若用于较高功率开关或频繁切换，应采取散热措施或选择更大封装。
- 引脚排列因厂商不同可能略有差异，设计前请以 FOSAN 官方数据表为准，核对引脚定义与典型电路图。
五、采购与替代
- 本型号适合批量表贴生产与单颗替换。若需更高功率或更高频率，可考虑更大封装或具有更高 fT / Pd 的同类 PNP 器件。采购时建议索取完整数据手册以确认测试条件与典型曲线。
如需更详尽的静态与动态特性曲线、引脚图与典型应用电路，请参考 FOSAN 官方数据表或提供具体工作点以便给出更精确的电路设计建议。
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