WMSIC Electronic Components

HRE CGA0805X5R106M500MT

ModelCGA0805X5R106M500MT
Package0805
BrandHRE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

18 specifications

Core information

Product name
HRE CGA0805X5R106M500MT
Type
HRE
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HRE
Electronic Component
CGA0805X5R106M500MT
Electronic Component
1
Electronic Component
10uF
Package
0805
Electronic Component
SMD Capacitor(MLCC)
Electronic Component
±20%
Electronic Component
0.042g
Electronic Component
1
Electronic Component
BM0264778619
Electronic Component
X5R
Voltage
50V
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

CGA0805X5R106M500MT 产品概述

一、产品简介

CGA0805X5R106M500MT 为贴片多层陶瓷电容(MLCC),标称容量 10 µF,公差 ±20%(M),额定工作电压 50 V,介质类型 X5R,常见封装 0805(约 2.0 mm × 1.25 mm)。本型号适合对体积、成本有要求的中高电压去耦、旁路与储能场合。

二、主要规格与结构

  • 电容值:10 µF
  • 精度:±20%(M)
  • 额定电压:50 V DC
  • 介质:X5R(温度系数等级)
  • 封装:0805(2012公制,约 2.0×1.25 mm)
  • 形态:表面贴装,多层陶瓷结构,适配自动贴装与回流焊工艺

三、电气与热学特性

X5R 介质适用于 -55°C 至 +85°C 范围内的常温应用,温度变化对电容有一定影响但属 X5R 等级允许范围。需注意 MLCC 在直流偏置下会产生容量衰减(DC-bias effect),在靠近额定电压工作时实际有效电容量会显著下降;在高频场合其高频响应与等效串联电感(ESL)也会影响性能。

四、典型应用场景

  • 开关电源输入/输出滤波与旁路
  • 电源总线去耦与局部储能(中高压电源轨)
  • 工业控制、通信设备与消费类电子的电源模块
  • 与小容量高速电容并联,用于宽频带去耦

五、设计与使用建议

  • 在布板时尽量靠近供电引脚,走线短且宽,减少寄生感抗;必要时并联小值低ESL电容以改善高频性能。
  • 设计时考虑 DC-bias 与温度影响,预留裕量或选择更高额定电压/更大容量以保证实际需求。
  • 兼容无铅回流焊(建议遵循厂家回流曲线,最高回流温度一般不超过 260°C),避免机械弯曲或应力集中以降低裂纹风险。
  • 对于振动或热循环严苛的应用,建议进行可靠性评估或选择专门的高可靠性封装/等级。

六、包装与可靠性

该类产品通常采用卷带供货,适合自动化贴装。多层陶瓷电容具有良好的长期稳定性与批量一致性,但具体寿命与可靠性指标(如热循环、湿气测试、焊接热耐受)应参照供应商的详细技术资料和认证报告,必要时进行实际工况验证。

总结:CGA0805X5R106M500MT(HRE 芯声)以其紧凑封装和 50V/10µF 的规格,适合空间受限且需中高电压去耦或储能的电子设计,选型时应重点考虑 DC-bias、温度特性与布局工艺,以确保系统性能与可靠性。

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