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HRE CGA1206X7R222K102MT
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
18
specifications
Core information
- Product name
- HRE CGA1206X7R222K102MT
- Type
- HRE
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HRE
- Electronic Component
- CGA1206X7R222K102MT
- Electronic Component
- 1
- Electronic Component
- 2.2nF
- Package
- 1206
- Electronic Component
- SMD Capacitor(MLCC)
- Electronic Component
- ±10%
- Electronic Component
- 0.047g
- Electronic Component
- 1
- Electronic Component
- BM0265109131
- Electronic Component
- X7R
- Voltage
- 1kV
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CGA1206X7R222K102MT 产品概述
一、主要参数概览
- 名称：CGA1206X7R222K102MT（品牌：HRE / 芯声）
- 容值：2.2 nF
- 精度：±10%（K）
- 封装：1206（英制）
- 温度系数/材料：X7R（Class II 陶瓷介质）
- 额定电压：资料中存在矛盾（同时出现 1 kV 与 50 V），请以厂商正式规格书为准。
二、介质与电气特性要点
X7R 为常用的类 II 陶瓷介质，额定温度范围通常为 −55°C 至 +125°C，温度引起的容量变化在 ±15% 级别。与 C0G/NP0 相比，X7R 在体积利用率上更优，但电压依赖性和老化效应更明显：在直流偏置或高场下实际有效容量会下降，且使用初期会有随时间的老化衰减。若产品确认为 1 kV 等高压等级，应特别关注介质击穿与包封工艺；若为 50 V 等低压等级，则为常见的电源去耦与滤波元件。
三、典型应用场景
- 电源去耦与旁路（中低频至高频混合场合）
- 滤波、耦合与阻抗成形
- 高频开关电源的局部储能与抑噪
- 若为高压（1 kV）版本，可用于高压滤波、脉冲电路或测量前端（需评估电压系数与绝缘设计）
四、封装与装配建议
1206 封装便于贴片自动化，但对焊接应力较敏感。推荐遵循厂商的回流焊曲线，避免过高温度和过长时间加热；贴装时注意焊盘设计以减小热机械应力。储存时防潮防震，避免长时间暴露在高温高湿环境。布局上尽量将去耦电容靠近 IC 电源引脚放置，缩短引线长度以降低 ESL。
五、选型与可靠性提醒
- 确认额定电压：当前信息存在 1 kV 与 50 V 矛盾，选型时以 HRE 的器件数据表为准。
- 评估直流偏置效应：X7R 在工作电压下会有显著容量下降，应在设计中作 derating（降额）或选择更高额定电压的型号。
- 注意老化与温漂：对容值稳定性要求高的振荡/定时类电路应优先考虑 NP0/C0G；X7R 更适合去耦和滤波。
- 试样验证：建议在目标应用环境做温度、湿度、直流偏置及循环老化测试。
如需我帮您核对厂商数据表或根据实际工作电压/频率条件给出更具体的替代型号与布局建议，请提供预期工作电压与主要应用场景。
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